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ST Microelectronics
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Part No. |
2STA1695
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OCR Text |
...igh breakdown voltage v ceo = -140v complementary to 2stc4468 typical f t =20mhz fully characterized at 125 o c applications audio power amplifier description the device is a pnp transistor manufactured using new bit-la (bipolar tran... |
Description |
High power PNP epitaxial planar bipolar transistor
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File Size |
220.16K /
9 Page |
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it Online |
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RCD Components
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Part No. |
135-1100 135CCCC 135-XXXX 1351100
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OCR Text |
...36] 80V .355 [9.00] .156 [3.96] 140V .500 [12.7] .188 [4.78] 140V .550 [14.2] .188 [4.78] 180V .770 [19.6] .188 [4.78] 150V .500 [12.7] .225 [5.72] 210V .625 [15.9] .225 [5.72] 300V .800 [20.3] .250 [6.35] 400V .875 [22.2] .312 [7.92] 450V ... |
Description |
Precesion Power Wirewoumd Resistors
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File Size |
71.51K /
1 Page |
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it Online |
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SavantIC
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Part No. |
MJ15002
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OCR Text |
... IB=-0.4A IC=-4A ; VCE=-2V VCE=-140v; IB=0 VCE=-140v; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-4A ; VCE=-2V VCE=-40Vdc,t=1 s, Nonrepetitive
-140
V
VCE(sat) VBE ICEO ICEX IEBO hFE
Collector-emitter saturation voltage
-1.0
V
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Description |
SILICON POWER TRANSISTOR
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File Size |
138.94K /
3 Page |
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it Online |
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SavantIC
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Part No. |
MJ15001
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OCR Text |
...=4A; IB=0.4A IC=4A ; VCE=2V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=4A ; VCE=2V VCE=40Vdc,t=1s, Nonrepetitive Is/b Second breakdown collector current With base forward biased VCE=100Vdc,t=1s, Nonrepetitive COB fT Outpu... |
Description |
SILICON POWER TRANSISTOR
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File Size |
138.55K /
3 Page |
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it Online |
Download Datasheet
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Price and Availability
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