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0.0567 Datasheet PDF File

For 0.0567 Found Datasheets File :: 1869 Search Time::1.891ms
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				Zarlink Semiconductor
Part No.	ZL20200LCE
OCR Text	.... . . . . . . . . . . . . . 3 1.0 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.1 receive path . . . . . . . . . . . . . . ...
Description	Dual band IS136/AMPS transceiver.
File Size	503.10K / 52 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7478TR
OCR Text	...us drain current, v gs @ 10v 7.0 i d @ t a = 70c continuous drain current, v gs @ 10v 5.6 a i dm pulsed drain current ? 56 p d @t a = 25c power dissipation ? 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv...
Description	Leaded 60V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	114.09K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF6678TRPBF
OCR Text	... gate voltage sq sx st mq mx mt 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 23a v dss v gs r ds(on) r ds(on) 30v ...
Description	A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes.
File Size	242.69K / 10 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	AVD015F
OCR Text	... 2.5 ma h fe v ce = 5.0 v i c = 500 ma 15 120 --- p g h h c v cc = 50 v p out = 15 w f = 1025 ? 1150 mhz 10.0 35 db % npn silicon rf power transistor avd015f desc...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.29K / 1 Page	View it Online	Download Datasheet

				CUI INC
Part No.	PSE-800-15
OCR Text	...er factor correction ? 3.3 vdc (0.5 a) standby voltage ? droop current sharing or forced current sharing (optional) ? single i/o connector for ac input, dc output and signals ? remote on/off control, power good signal ? efficiency up to 90%...
Description	AC-DC HOT-SWAP POWER SUPPLY
File Size	301.84K / 4 Page	View it Online	Download Datasheet

				Inchange Semiconductor ...
Part No.	BT151-800
OCR Text	...average gate power dissipation 0.5 w t j operating junction temperature 125 t stg storage temperature -45~150 electrical characteristics (t c =25 unless otherwise specified) symbol parameter conditions min max unit i ...
Description	isc Thyristors
File Size	134.55K / 1 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	UTM3023-15
OCR Text	...eakdown voltage bv dss v gs =0 v, i ds =250a 30 v drain-source leakage current i dss v ds =24 v, v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics ga...
Description	N-CHANNEL POWER MOSFET
File Size	249.80K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF6678TR1
OCR Text	...he footprint of a so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniq ues, when ap...
Description	Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes.
File Size	251.43K / 10 Page	View it Online	Download Datasheet

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