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  0.451 Datasheet PDF File

For 0.451 Found Datasheets File :: 1905    Search Time::2.328ms    
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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text ...ated VDSS = 900V RDS(on) = 8.0 G ID = 1.7A S Description Third generation HEXFETs from international Rectifier provide the des...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    IRFPG50

International Rectifier
Part No. IRFPG50
OCR Text ...A) 10 100us 1ms 1 10ms 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. M...451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 ...
Description Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A)

File Size 207.35K  /  8 Page

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    IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR

IRF[International Rectifier]
Part No. IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR
OCR Text ...ng D VDSS = 60V RDS(on) = 0.028 G ID = 50A Description Third Generation HEXFETs from International Rectifier utilize advanced ...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(IRFZ44L / IRFZ44S) HEXFET Power MOSFET

File Size 320.84K  /  10 Page

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    IRFZ44R

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44R
OCR Text ... l D VDSS = 60V RDS(on) = 0.028 G S ID = 50*A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced ...451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3...
Description Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.028ohm,身份证\u003d 50 *甲)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 152.09K  /  8 Page

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    IRHM7460SE

IRF[International Rectifier]
Part No. IRHM7460SE
OCR Text ...FFECT (SEE) RAD HARD 500 Volt, 0.32, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual...451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: ...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

File Size 99.74K  /  4 Page

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    KGF1256 KGF1256B KGF1256B_1256

OKI electronic componet...
OKI[OKI electronic componets]
OKI electronic eomponets
Part No. KGF1256 KGF1256B KGF1256B_1256
OCR Text ...P PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Pa...451 0.460 0.475 0.490 0.509 0.517 0.539 0.551 0.563 0.583 0.595 0.611 0.623 0.632 0.648 -72.83 -82.5...
Description Medium-Power Amplifier
From old datasheet system

File Size 199.59K  /  14 Page

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    MSA-1100 MSA-1100-GP4

Plato
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. MSA-1100 MSA-1100-GP4
OCR Text ... GHz * 17.5 dBm Typical P1dB at 0.5 GHz * 12 dB Typical 50 Gain at 0.5 GHz * 3.5 dB Typical Noise Figure at 0.5 GHz combining low noise ...451 MSA-1100 Typical Scattering Parameters[1,2] (TA = 25C, Id = 60 mA) Freq. GHz S11 Mag Ang dB ...
Description Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大

File Size 52.25K  /  4 Page

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    NE72218 NE72218-T1 NE72218-T2

NEC Corp.
NEC[NEC]
Part No. NE72218 NE72218-T1 NE72218-T2
OCR Text ...packaging only available : Lg = 0.8 m : Wg = 400 m ORDERING INFORMATION Part Number NE72218-T1 Package 4-pin super minimold Supplying Fo...451 0.498 0.551 0.598 0.645 0.678 0.717 0.740 0.766 0.793 0.822 0.838 0.849 0.855 0.856 0.851 0.850 ...
Description RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

File Size 57.69K  /  12 Page

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    TK71741S TK71741SCL TK71746 TK71746S TK71746SCL TK71749 TK71749S TK71749SCL TK71724 TK71724SCL TK71744S TK71744 TK71744S

TOKO, Inc.
TOKO Inc.
TOKO[TOKO Inc]
Part No. TK71741S TK71741SCL TK71746 TK71746S TK71746SCL TK71749 TK71749S TK71749SCL TK71724 TK71724SCL TK71744S TK71744 TK71744SCL TK71731S TK71748S TK71748SCL_48 TK71740S TK71743SCL TK71743SCL_43 TK71738 TK71732SCL TK71732S TK71734SCL TK71747S TK71735 TK71727S TK71727SCL TK71727SCL_27 TK71733SCL TK71733SCL_33 TK71733 TK71733S TK717XXS TK71720 TK71720S TK71720SCL TK71736SCL TK71750SCL TK71750SCL_50 TK71730SCL TK71731SCL_31 TK71732 TK71732SCL_32 TK71734 TK71735S TK71736 TK71736SCL_36 TK71737S TK71746SCL/46 TK71743SCL/43 TK71734SCL/34 TK71747SCL/47 TK71733SCL/33 TK71748SCL/48 TK71718SCL/18 TK71721SCL/21 TK71731SCL/31 TK71735SCL/35 TK71730SCL/30 TK71750SCL/50 TK71741SCL/41 TK71736SCL/36 TK71723SCL/23 TK71749SCL/49 TK71726SCL/26 TK71727SCL/27 TK71728SCL/28 TK71732SCL/32 TK71720SCL/20 TK71745SCL/45 TK71716SCL/16 TK71722SCL/22 TK71717SCL/17 TK71737SCL/37 TK71729SCL/29 TK71719SCL/19 TK71738SCL/38 TK71725SCL TK71725SCL/25 TK71716S TK71716SCL TK71715SCL/15 TK71722 TK71722S TK71722SCL TK71723 TK71723S TK71723SCL TK71724S TK71724SCL/24 TK71726 TK71726S TK71726SCL TK71727 TK71734S TK71717 TK71717S TK71717SCL TK71719 TK71719S TK71719SCL TK71739SCL/39 TK71742SCL TK71742SCL/42 TK71740SCL TK71740SCL/40 TK
OCR Text 0.22 mF is Stable For n n n n n n n n n n n n Any Type Capacitor withVOUT 1.8 V) Built-in Shunt Circuit of Output to GND. The Stored Energ...451 V 3.553 V 3.654 V 3.756 V 3.857 V 3.959 V 4.060 V 4.162 V 4.263 V 4.365 V 4.466 V 4.568 V 4.669 ...
Description LOW DROPOUT VOLTAGE REGULATOR 4.1 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO5
LOW DROPOUT VOLTAGE REGULATOR 5 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO5
LOW DROPOUT VOLTAGE REGULATOR 低压差稳压器

File Size 149.76K  /  13 Page

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    2SC4225 2SC4225R2 2SC4225R3

NEC Corp.
NEC[NEC]
Part No. 2SC4225 2SC4225R2 2SC4225R3
OCR Text ...IMENSIONS in millimeters 2.1 0.1 1.25 0.1 FEATURES 2.0 0.2 0.3 +0.1 -0 * Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB...451 0.315 0.240 0.191 0.161 0.138 0.121 0.107 0.095 0.085 0.080 0.078 0.089 0.084 0.091 0.103 0.117 ...
Description SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

File Size 39.87K  /  8 Page

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For 0.451 Found Datasheets File :: 1905    Search Time::2.328ms    
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