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  1.7a Datasheet PDF File

For 1.7a Found Datasheets File :: 1383    Search Time::2.359ms    
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    IRG4BC30FD IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC30FD IRG4BC30
OCR Text ... typ. = 1.59V @VGE = 15V, IC = 17A n-cha nnel Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minim...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

File Size 402.63K  /  10 Page

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    SIHFB16N50K SIHFB16N50K-E3

Vishay Siliconix
Part No. SIHFB16N50K SIHFB16N50K-E3
OCR Text ...urce Current (A) 2.5 ID = 17A VGS = 10V 10 BOTTOM 2.0 5.5V 1.5 1 1.0 0.5 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , J...
Description Power MOSFET

File Size 181.80K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SFH9140
OCR Text ...,f =1MHz See Fig 5 VDD=-50V,ID=-17A, RG=12 See Fig 13 VDS=-80V,VGS=-10V, ID=-17A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-S...
Description P-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 208.27K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SFF9140
OCR Text ...,f =1MHz See Fig 5 VDD=-50V,ID=-17A, RG=12 See Fig 13 VDS=-80V,VGS=-10V, ID=-17A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-S...
Description Advanced Power MOSFET

File Size 206.48K  /  7 Page

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    SSFP32N10

GOOD-ARK Electronics
Part No. SSFP32N10
OCR Text ... VGS=-20V VDS=VGS,ID=250A ID=17A nC VDS=80V VGS=10V VDD=50V ID=17A nS RG=9.1 RD=2.9 Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ LS Ciss Coss Crss Internal Source Inductance Input...
Description StarMOST Power MOSFET

File Size 122.91K  /  2 Page

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    Icemos Technology
Part No. ICE17N60
OCR Text ...t summary i d t a =25 o c 17a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.19 typ q g v ds =480v 59nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 552.45K  /  9 Page

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    Icemos Technology
Part No. ICE17N60FP
OCR Text ...t summary i d t a =25 o c 17a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.19 typ q g v ds =480v 59nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 518.47K  /  9 Page

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    FDPF17N60NT FDP17N60N

Fairchild Semiconductor
Part No. FDPF17N60NT FDP17N60N
OCR Text 17A, 0.34 Features * RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A * Low Gate Charge ( Typ. 48nC) * Low Crss ( Typ. 23pF) * Fast Switching * 100% Avalanche Tested * Improved dv/dt Capability * RoHS Compliant UniFETTM July 2009 Desc...
Description N-Channel MOSFET 600V, 17A, 0.34Ω
N-Channel MOSFET 600V, 17A, 0.34惟
N-Channel MOSFET 600V, 17A, 0.34楼?

File Size 712.53K  /  9 Page

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