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For 10-300s Found Datasheets File :: 12303 Search Time::3.062ms
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				Zetex Semiconductors Diodes Incorporated
Part No.	FZT1051A
OCR Text	... P tot T j:T stg VALUE 150 40 5 10 5 500 2.5 -55 to +150 UNIT V V V A A mA W C The power which can be dissipated assuming the device is ...300s. Duty cycle 2% FZT1051A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8...
Description	NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR
File Size	45.99K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	FZT788 FZT788B FZT788BTA FZT788B-15
OCR Text	...0.2 0 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=200 - (Volts) V V - (Volts) 0.01 0.1 1 I+ - Collector Current (Amps) 10 0.01 0.1 1 I+ - Collector Current...
Description	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	80.19K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7389 IRF7389TR
OCR Text	... Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 3.0V 3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 1 0.1 1 20s PULSE WIDTH TJ = 150C...
Description	Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	210.72K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7401 IRF7402 IRF7401TR
OCR Text	...PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS ...300s; duty cycle 2%. ISD 4.1A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Surface mounted on ...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
File Size	117.75K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7403 IRF7403TRPBF
OCR Text	... PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulsed Drain Current, V GS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @...300s; duty cycle 2%. I SD 4.0A, di/dt 180A/s, VDD V(BR)DSS, TJ 150C Surface mounted on...
Description	Generation V Technology Power MOSFET
File Size	112.84K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7404
OCR Text	...PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VG...300s; duty cycle 2%. ISD -3.2A, di/dt -65A/s, VDD V(BR)DSS, TJ 150C Surface mounted on...
Description	HEXFET Power MOSFET
File Size	159.41K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF740B IRFS740B IRF740
OCR Text	...0A, 400V, RDS(on) = 0.54 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improve...300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semico...
Description	400V N-Channel MOSFET
File Size	892.13K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	... RG = 6.0 --- RD = 16, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ...300s; duty cycle 2%. 2 www.irf.com IRFL014N 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOT...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLL110 IRLL110TR
OCR Text	...nge Soldewring Temperature, for 10 seconds Max. 1.5 0.93 12 3.1 2..0 0.025 0.017 -/+10 50 1.5 0.31 5.5 -55 to + 150 300 (1.6mm from cas...300s; duty cycle 2%. 2 www.irf.com IRLL110 www.irf.com 3 IRLL110 4 www.irf....
Description	1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
File Size	213.54K / 8 Page	View it Online	Download Datasheet

				WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd.
Part No.	SF1604G SF1603G SF1602G SF1606G SF1601G SF1605G
OCR Text	...0A Dim Min Max A 14.9 15.1 B -- 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 O 3.91 O H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K...300s 2% duty cycle 0 0 50 100 150 TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve ...
Description	16A SUPER-FAST GLASS PASSIVATED RECTIFIER
File Size	45.07K / 3 Page	View it Online	Download Datasheet

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