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  10.6mm Datasheet PDF File

For 10.6mm Found Datasheets File :: 17491    Search Time::1.5ms    
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    IRF[International Rectifier]
Part No. IRHLF6970Z4 IRHLF6930Z4
OCR Text ...st page -1.6 -1.0 -6.4 5.0 0.04 10 10 -1.6 0.5 -4.0 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in/1.6mm from case for 10s) 0.98 ( Typical ) g www.irf.com 1 07/07/03 IRHLF6970Z4 Pre-...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

File Size 143.60K  /  8 Page

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    JANSR2N7270 JANSF2N7270 JANSG2N7270

International Rectifier
Part No. JANSR2N7270 JANSF2N7270 JANSG2N7270
OCR Text ... n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma do...6mm) from case for 10s) weight 9.3 (typical) g pd - 90673a pre-irradiation 500volt, 0.45 w...
Description 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
500V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 310.75K  /  12 Page

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    IRF[International Rectifier]
Part No. IRHLF77110 IRHLF73110
OCR Text ...he last page 6.0 3.7 24 23 0.18 10 43 6.0 2.3 4.9 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns C 300 (0.063in/1.6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 12/27/06 IRHLF77110 Pre-Irradiatio...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)

File Size 203.72K  /  9 Page

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    IRF[International Rectifier]
Part No. IRHLF7970Z4 IRHLF7930Z4 IRHLF6970Z4 IRHLF6930Z4
OCR Text ...st page -1.6 -1.0 -6.4 5.0 0.04 10 10 -1.6 0.5 -4.0 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063in/1.6mm from case for 10s) 0.98 ( Typical ) g www.irf.com 1 04/07/04 IRHLF7970Z4 Pre-...
Description 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)

File Size 143.92K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHM7264SE
OCR Text ... Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flas...6mm) from case for 10 sec.) 9.3 (typical) Units A W W/K V mJ A mJ V/ns oC g *ID curren...
Description TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)

File Size 91.23K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHM7450SE
OCR Text ... Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flas...6mm) from case for 10 sec.) 9.3 (typical) Units A W W/K V mJ A mJ V/ns oC To Order g ...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

File Size 91.39K  /  4 Page

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    IRF[International Rectifier]
Part No. IRHM8230 IRHM7230
OCR Text ... (typical) www.irf.com 1 10/14/98 IRHM7230, IRHM8230 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless O...6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from sou...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 295.92K  /  12 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHM8260 IRHM3260 IRHM4260 IRHM7260
OCR Text ... 200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7260 Pre-Irradiation 1000 100 I D , Drain-to-Source Current...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA

File Size 263.31K  /  8 Page

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    International Rectifier, Corp.
Part No. IRFY440CM
OCR Text ... repetitive avalanche energy ? 10 mj dv/dt peak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in (1.6mm) from case for 10 sec) weight 4.3(typical) g elec...
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道(BVdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 7.0A

File Size 262.88K  /  6 Page

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    IRF[International Rectifier]
Part No. IRHM8Z60 IRHM3Z60 IRHM4Z60 IRHM7Z60
OCR Text ...S=-10V 30 20 15 @VGS=-15V 25 15 10 @VGS=-20V 20 10 _ 35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7Z60 Pre-I...
Description 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

File Size 119.58K  /  8 Page

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For 10.6mm Found Datasheets File :: 17491    Search Time::1.5ms    
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