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  10mh Datasheet PDF File

For 10mh Found Datasheets File :: 657    Search Time::1.438ms    
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    10MQ060N

International Rectifier
Part No. 10MQ060N
OCR Text ... pulse TJ = 25 C, IAS = 1A, L = 10mh Following any rated load condition and with rated VRRM applied A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 10MQ 0.63 0.71 0.57 0.63 Units V ...
Description SCHOTTKY RECTIFIER 2.1 Amp

File Size 91.48K  /  6 Page

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    SSH10N80A

Fairchild Semiconductor
Part No. SSH10N80A
OCR Text ...aximum Junction Temperature y L=10mh, IAS=10A, VDD=50V, RG=27, Starting TJ =25C z ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 250s, Duty Cycle 2% | Essentially Independent of Operating Temperature 2 ...
Description N-CHANNEL POWER MOSFET

File Size 252.10K  /  8 Page

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    30BQ100

International Rectifier
Part No. 30BQ100
OCR Text .... T J = 25C, IAS = 2.8A, L = 10mh Current decaying linearly to zero in 1sec Frequency limited by TJ max. VA = 1.5 X VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop See Fig. 1 30BQ 0.79 0.90 0.62 0.7...
Description SCHOTTKY RECTIFIER, 3Amp
SCHOTTKY RECTIFIER/ 3Amp

File Size 120.39K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SFP9640
OCR Text ...imum Junction Temperature 2 O L=10mh, I AS=-11A, V DD=-50V, R G=27*, Starting T J =25oCo _ _ _ 3 O ISD <-11A, di/dt <450A/s, VDD < BVDSS , Starting T J =25 C _ 4 Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% O 5 Essentially Independent ...
Description P-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 255.67K  /  7 Page

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    TSM35N03 TSM35N03CP

TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM35N03 TSM35N03CP
OCR Text ...(VDD = 100V, VGS=10V, IAS=2A, L=10mh, RG=25) TA = 25 oC TA = 100 C o Symbol VDS VGS ID IDM PD TJ TJ, TSTG EAS Limit 30 20 50 350 57 23 +150 -55 to +150 300 Unit V V A W W/oC o o C C mJ Thermal Performance Parameter ...
Description N-Channel Enhancement Mode MOSFET

File Size 128.86K  /  3 Page

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    KTC3552T

KEC(Korea Electronics)
Part No. KTC3552T
OCR Text ....5 COLLECTOR CURRENT I C (A) L=10mh I C /I B =5 V CB =150V I B1 =-I B2 2.0 1.5 1.0 0.5 0 VCEX(SUS) VCEO(SUS) 1.0 0.5 0.3 0.1 0.1 0.3 0.5 1 3 5 COLLECTOR CURRENT I C (A) 0 100 200 300 400 500 COLLECTOR EMIT...
Description DC-DC CONVERTERS RELAY DRIVERS/ LAMP DRIVERS/ MOTOR DRIVERS/ STROBES APPLICATION

File Size 401.88K  /  3 Page

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    TSM1N60CP TSM1N60 TSM1N60CH

TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM1N60CP TSM1N60 TSM1N60CH
OCR Text ...(VDD = 100V, VGS=10V, IAS=2A, L=10mh, RG=25) TJ TJ, TSTG EAS o Symbol VDS VGS ID IDM PD Limit 600V 30 1 9 50 0.4 +150 - 55 to +150 20 Unit V V A A W W/oC o o C C mJ Thermal Performance Parameter Lead Temperature (1...
Description N-Channel Power Enhancement Mode MOSFET

File Size 170.65K  /  4 Page

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    SANYO
Part No. 2SC3149
OCR Text ...0.25A, IB1=0.05A, IB2=-0.05A, L=10mh, Turn-ON Time Storage Time Fall Time ton tstg tf clamped IC=1A, IB1=0.2A, IC=1A, IB1=0.2A, IB2=-0.4A, RL=400, IB2=-0.4A, RL=400, VCC=400V VCC=400V IC=1A, IB1=0.2A, IB2=-0.4A, RL=400, VC...
Description NPN Triple Diffused Planar Silicon Transistor 800V/1.5A Switching Regulator Applications

File Size 107.63K  /  5 Page

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    BU941

Unisonic Technologies
Part No. BU941
OCR Text ...oltage Ic=100mA, Vclamp=400V, L=10mh VCEO(sus)* (see fig. 1) Collector Cut-off Current VCE=500V, VBE=0 ICES VCE=500V, VBE=0, Tj=125C Collector Cut-off Current VCE=450V, IB=0 ICEO VCE=450V, IB=0, Tj=125C Emitter Cut-off Current IEBO VEB=5V, ...
Description NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER

File Size 175.66K  /  4 Page

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    MIP704

Panasonic Semiconductor
Part No. MIP704
OCR Text ...t, not the average current. L = 10mh, IL = 3.32A, VDD = 30V, 1pulse, TC = 85C Mounting on the PCB (Glass epoxy board, the size of 100mm x 100mm). (Ta = 25C) s Block Diagram D Short circuit load protection Over voltage protection...
Description SILICON MOS IC

File Size 29.22K  /  2 Page

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For 10mh Found Datasheets File :: 657    Search Time::1.438ms    
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