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5821BCB HAF2017 AON6508 1117B 00144 A5800335 1117B FMB3904
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  10ms Datasheet PDF File

For 10ms Found Datasheets File :: 26519    Search Time::1.5ms    
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    International Rectifier, Corp.
Part No. SD1100C
OCR Text .... Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave KA s 2 A C A 180 conduction, half sine wave Double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reappli...
Description STANDARD RECOVERY DIODES Hockey Puk Version 标准恢复二极管曲棍球北辰版本

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    TY Semiconductor Co., Ltd
Part No. AOT10T60P
OCR Text ...r to-220/to-263 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 12: maximum forward biased safe operating area for to-220f pb free (note f) 10 m s ...
Description Trench Power AlphaMOS-II technology

File Size 1,237.39K  /  7 Page

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    IRF[International Rectifier]
Part No. IRK71 IRK91
OCR Text ...wave, Initial TJ = TJ max. t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage r...
Description ADD-A-pak GEN V Power Modules

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    INFINEON
Part No. IHW40N60T
OCR Text ...0s 50s Ic 1A DC 1ms 10ms 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off...
Description Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

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    IHW30N120R

Infineon Technologies AG
Part No. IHW30N120R
OCR Text ...limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperatu...
Description IGBT with monolithic body diode for soft switching Applications

File Size 1,001.42K  /  12 Page

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    IHW30N120R2

Infineon Technologies AG
Part No. IHW30N120R2
OCR Text ...limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperatu...
Description Reverse Conducting IGBT with monolithic body diode

File Size 383.17K  /  12 Page

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    IHW15N120R

Infineon Technologies AG
Part No. IHW15N120R
OCR Text ...limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperatu...
Description Reverse Conducting IGBT with monolithic body diode

File Size 367.22K  /  12 Page

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    IHW15N120R2

Infineon Technologies AG
Part No. IHW15N120R2
OCR Text ...limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25C Operating junction temperatu...
Description Reverse Conducting IGBT with monolithic body diode

File Size 361.77K  /  12 Page

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    16TTS..S

International Rectifier
Part No. 16TTS..S
OCR Text ...80 conduction half sine wave 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A 2s 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A s V m V mA TJ = 25 C TJ = 125 C VR = rated VRRM/ VDRM ...
Description SURFACE MOUNTABLE PHASE CONTROL SCR

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    20ETF04STRL 20ETF04STRR

International Rectifier
Part No. 20ETF04STRL 20ETF04STRR
OCR Text ..., 180 conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 300 316 442 A2 s A s 2 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage re...
Description 200V Fast Recovery Diode in a D2-Pak package
400V Fast Recovery Diode in a D2-Pak package

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