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  127-300 Datasheet PDF File

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    SL6649-1 SL6649-I SL6649-KG SL6649-MPEF SL6649-MPES SL66491-1

ZARLINK[Zarlink Semiconductor Inc]
Part No. SL6649-1 SL6649-I SL6649-KG SL6649-MPEF SL6649-MPES SL66491-1
OCR Text ...1 + adj-2 2.0 65 65 52 Min Typ -127 2.5 2.5 70 70 53 Max -124 Units dBm kHz kHz dB dB dB Conditions f = 4.5kHz, RS = 50 3dB De-Sensitisation...300.000 350.000 400.000 450.000 500.000 550.000 600.000 S11 MAG. 0.963 0.949 0.934 0.906 0.876 0....
Description 200MHz DIRECT CONVERSION FSK DATA RECEIVER

File Size 322.91K  /  14 Page

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    SMZ150 SMZ180 SMZ160 SMZ200 SMZ20 SMZ10 SMZ120 SMZ1 SMZ91 SMZ100 SMZ11 SMZ110 SMZ12 SMZ13 SMZ130 SMZ15 SMZ16 SMZ18 SMZ22

Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
Part No. SMZ150 SMZ180 SMZ160 SMZ200 SMZ20 SMZ10 SMZ120 SMZ1 SMZ91 SMZ100 SMZ11 SMZ110 SMZ12 SMZ13 SMZ130 SMZ15 SMZ16 SMZ18 SMZ22 SMZ24 SMZ27 SMZ3.9 SMZ30 SMZ33 SMZ36 SMZ39 SMZ4.3 SMZ4.7 SMZ43 SMZ47 SMZ5.1 SMZ5.6 SMZ51 SMZ56 SMZ6.2 SMZ6.8 SMZ62 SMZ68 SMZ7.5 SMZ75 SMZ8.2 SMZ82 SMZ9.1
OCR Text ...50 54 60 66 72 79 88 96 106 116 127 141 156 171 191 212 Test cur. Mestrom Iztest [mA] 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50...300) 100 (<300) 110 (<350) 120 (<350) 150 (<350) Temp. Coeffiz. of Z-voltage ...der Z-spanng. VZ [10...
Description    Surface mount Silicon-Zener Diodes (non-planar technology)
surface mount silicon Zener diodes 6.8 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
surface mount silicon Zener diodes 6.2 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
surface mount silicon Zener diodes 5.6 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB

File Size 51.91K  /  2 Page

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    SPW47N60C2

INFINEON[Infineon Technologies AG]
Part No. SPW47N60C2
OCR Text ...arts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 10 2002-10-07 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 119.94K  /  11 Page

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    SPW47N60S5

INFINEON[Infineon Technologies AG]
Part No. SPW47N60S5
OCR Text ...arts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 10 2003-07-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights...
Description for lowest Conduction Losses
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 233.05K  /  11 Page

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    1ZC24 1ZC43 1ZC91 1ZC100 1ZC110 1ZC12 1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22 1ZC27 1ZC30 1ZC33 1ZC36 1ZC39 1ZC47 1ZC

TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
Part No. 1ZC24 1ZC43 1ZC91 1ZC100 1ZC110 1ZC12 1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22 1ZC27 1ZC30 1ZC33 1ZC36 1ZC39 1ZC47 1ZC51 1ZC56 1ZC62 1ZC68 1ZC75 1ZC82
OCR Text ...45 48 53 60 68 77 85 90 104 113 127 138 152 171 ZENER CHARACTERISTICS FORWARD VOLTAGE VF (V) MAX. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 REVERSE CURRENT TYPE MEASUREMEASUREI...
Description ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
240 VAC 3-PH OVER/UNDER VOLT. RLY
Card Edge Connector; Number of Contacts:64; Pitch Spacing:1mm; Tail Length:2.30mm; Contact Termination:Solder; Connector Mounting:PC Board; Contact Material:Phosphor Bronze; Contact Plating:Tin; Leaded Process Compatible:Yes
surface mount silicon Zener diodes
Card Edge Connector; Number of Contacts:36; Pitch Spacing:1mm; Tail Length:2.30mm; Contact Termination:Solder; Connector Mounting:PC Board; Contact Material:Phosphor Bronze; Contact Plating:Tin; Leaded Process Compatible:Yes 东芝稳压二极管硅扩散

File Size 109.84K  /  4 Page

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    AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000

MA-Com
MACOM[Tyco Electronics]
Part No. AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000
OCR Text ...113.34 -117.21 -120.73 -124.00 -127.52 -130.65 -134.18 -137.24 -139.90 -142.69 -145.50 -146.99 Mag 6.0729 5.9561 5.8267 5.7584 5.6232 5.4826...300 020 Visit www.macom.com for additional data sheets and product information. V 2.0 5 Min...
Description 200-3000 MHz, miniature broadband gain stage
Miniature Broadband Gain Stage 200 - 3000 MHz

File Size 114.73K  /  7 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...UNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Ch...300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ...AX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller "...300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...UNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Ch...300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...AX UNIT 7410 1050 390 312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Tu...300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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