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14000 sec Datasheet PDF File

For 14000 sec Found Datasheets File :: 269 Search Time::2.141ms
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				AVAGO TECHNOLOGIES LIMITED
Part No.	HSMA-A460-W50M1 HSMA-A461-X83M1 HSML-A461-W40M1
OCR Text	...600.00 7150.00 9000.00 11250.00 14000.00 Max. (mcd) 560.00 715.00 900.00 1125.00 1400.00 1800.00 2240.00 2850.00 3550.00 4500.00 5600.00 7150.00 9000.00 11250.00 14000.00 18000.00 Orange A B C D E Red Full Distribution Min. (nm) 597.0 600.0...
Description	SMT LED Surface Mount LED Indicator
File Size	225.69K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP3703PBF IRFP3703PBF-15
OCR Text	...ww.irf.com 3 IRFP3703PbF 14000 12000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Synchronous Rectification HEXFET Power MOSFET
File Size	212.80K / 9 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	BFC17
OCR Text	...= 0.6 Min. Typ. Max. Unit 11670 14000 1810 545 446 64 208 22 24 65 12 2530 870 670 95 315 45 50 95 25 ns nC pF SEME BFC17 SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current...
Description	4TH GENERATION MOSFET
File Size	26.35K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PSH71UDPBF
OCR Text	... www.irf.com IRG4PSH71UDPbF 14000 12000 10000 VGE = 0V, f = 1 MHZ C ies = C ge + C gc, C ce C res = C gc C oes = C ce + Cgc SHORTED 20 VGE, Gate-to-Emitter Voltage (V) 16 VCC = 400V IC = 70A C, Capacitance (pF) Cies 8...
Description	99 A, 1200 V, N-CHANNEL IGBT, TO-274AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	236.64K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7410PBF
OCR Text	...www.irf.com 3 IRF7410PbF 14000 12000 6 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crs...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...
Description	HEXFET?Power MOSFET HEXFET㈢Power MOSFET
File Size	150.83K / 9 Page	View it Online	Download Datasheet

				American Bright Optoelectronics, Corp. BRIGHT LED ELECTRONICS CORP
Part No.	BL-PPY-MSS-C10 BL-PPR-MSS-C10
OCR Text	... 7150 9000 11250 Max 9000 11250 14000 1. Luminous intensity is measured with an accuracy of 11%. 2. Wavelength binning is carried for all...sec max. 183 oC 225 200 Temperature ( C) 175 60-150s o 150 125 Ramp-dow n 6 ...
Description	SINGLE COLOR LED, YELLOW, 3.3 mm 6 X 6 MM, SURFACE MOUNT PACKAGE-4 SINGLE COLOR LED, RED, 3.3 mm 6 X 6 MM, SURFACE MOUNT PACKAGE-4 Nova LED 400 - AlInGaP Super high brightness surface mount LED.
File Size	170.22K / 7 Page	View it Online	Download Datasheet

				The ABB Group
Part No.	5STP38Q3600 5STP38Q4000 5STP38Q4200
OCR Text	...1) + D IT Valid for iT = 500 - 14000 A n A 0.341725 B 0.00009 C 0.07628 D 0.00231 Fig 2. On-state characteristics. Fig. 3 On state characteristics. ABB Semiconductors AG reserves the right to change specifications w...
Description	Phase Control Thyristor
File Size	218.87K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	50MT060ULSA 50MT060ULSTA
OCR Text	...ULSTA Bulletin I27191 02/05 14000 12000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1 MHZ C = C +C , C SHORTED ies ge gc ce Cres = Cgc 20.0 IC= 100A VCE = 480V Cies C, Capacitance (pF) 10000 8000 C =C +C oes ce g...
Description	Ultrafast Speed IGBT
File Size	216.71K / 10 Page	View it Online	Download Datasheet

				The ABB Group
Part No.	5STP34Q4600 5STP34Q5000 5STP34Q5200
OCR Text	...) + D IT Valid for iT = 500 - 14000 A A 1.0649 B 0.000105 C -0.038879 D 0.008155 Fig. 2 On-state characteristics. Tj=125C, 10ms half sine Fig. 3 On-state characteristics. ABB Semiconductors AG reserves the right to change specifi...
Description	Phase Control Thyristor
File Size	313.52K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7410
OCR Text	... www.irf.com 3 IRF7410 14000 12000 6 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crs...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...
Description	-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	100.66K / 9 Page	View it Online	Download Datasheet

For 14000 sec Found Datasheets File :: 269 Search Time::2.141ms
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