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				MAXWELL[Maxwell Technologies]
Part No.	29F0408RPFS 29F0408 29F0408RPFB 29F0408RPFE 29F0408RPFI
OCR Text	... x 8bit - Data register: (512 + 16) bit x 8bit * Automatic program and erase - Page program: (512 + 16) Byte - Block erase: (8K + 256) Byte ...4m (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation pr...
Description	32 Megabit (4m x 8-Bit) Flash Memory
File Size	837.19K / 33 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G
OCR Text	...cture Four internal banks, 4m x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control * * DM Write Latency ...
Description	16M x 16 bit DDR Synchronous DRAM (SDRAM)
File Size	439.41K / 54 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G
OCR Text	16 bit DDR Synchronous DRAM (SDRAM) Features * * * * * * * * Fast clock rate: 250/200MHz Differential Clock CK & CK Bi-directional DQS DLL...4m x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 3 - Burst len...
Description	16M x 16 bit DDR Synchronous DRAM (SDRAM)
File Size	408.15K / 51 Page	View it Online	Download Datasheet

				ELPIDA MEMORY INC
Part No.	EDS6416CHTA-60L-E
OCR Text	... eds6416chta (4m words 16 bits) description the eds6416ahta, eds6416chta are 64m bits sdrams organized as 1,048,576 words 16 bits 4 banks. all inputs and outputs are synchronized with the positive edg...
Description	4m X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	559.86K / 50 Page	View it Online	Download Datasheet

				INTEGRATED SILICON SOLUTION INC
Part No.	IS42S32160C-6BL
OCR Text	...q v ss /v ss q 13 13 9 13 13 9 16 16 16 16 512 (x 16) 8192 8192 8192 row decoder 8192 memory cell array bank 0 sense amp i/o gate bank control logic row address buffer a11 2 functional block diagram 16mbx16 sdram functional block diagram 1...
Description	16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
File Size	1,412.79K / 60 Page	View it Online	Download Datasheet

				AMIC Technology http://
Part No.	A29L320AUV-120U A29L320AUV-120UF A29L320AUV-70U A29L320AUG-90F A29L320AUG-90I A29L320AUG-90IF A29L320AUV-80 A29L320AUV-90 A29L320AUV-90I A29L320AUV-70I A29L320AUV-90IF A29L320AUV-70IF A29L320AUV-70UF A29L320AUV-90F A29L320AUV-90U A29L320AUV-90UF
OCR Text	16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4m X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 0.1 0.2 1.0 1.1 History Initial issue Error correction: Top/Bottom...
Description	4m X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	574.92K / 50 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	H57V2562GFR-60C H57V2562GFR-60L H57V2562GFR-75C H57V2562GFR-75L
OCR Text	...anized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not...4m x16 Bank3 4m x16 Bank2 4m x16 Bank1 4m x16 Bank0 X Decorders DQ0 I/O Buffer & Logic Sense AMP & I...
Description	256Mb Synchronous DRAM based on 4m x 4Bank x16 I/O
File Size	277.49K / 23 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text	...nized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.1GB/s/chip. I/O transactions are possible on both edges of t...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	204.60K / 16 Page	View it Online	Download Datasheet

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