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  180v Datasheet PDF File

For 180v Found Datasheets File :: 735    Search Time::1.5ms    
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    BDY26

Inchange Semiconductor Company Limited
Part No. BDY26
OCR Text ...eakdown voltage- : v (br)ceo = 180v(min.) collector-emitter saturation voltage- : v ce(sat )= 0.6v(max)@ i c = 2a high switching speed applications designed for lf signal powe amplifier applications. absolute maximum r...
Description isc Silicon NPN Power Transistor

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    2SC5993

Inchange Semiconductor Company Limited
Part No. 2SC5993
OCR Text ...er Breakdown Voltage: V(BR)CEO= 180v(Min) *Complement to Type 2SA2140 APPLICATIONS *Power amplification *For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Colle...
Description Silicon NPN Power Transistor

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    FUJI[Fuji Electric]
Part No. 2SK3775-01
OCR Text ...S=25V VDS=25V VGS=0V f=1MHz VCC=180v ID=16A VGS=10V RGS=10 VCC=150V ID=32A VGS=10V IF=32A VGS=0V Tch=25C IF=32A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 300 3.0 Typ. Max. 5.0 25 250 100 0.13 Units V V A nA S pF ...
Description N-CHANNEL SILICON POWER MOSFET

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    BDY26

Inchange Semiconductor Company Limited
Part No. BDY26
OCR Text ...er Breakdown Voltage: V(BR)CEO= 180v(Min.) *Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A *High Switching Speed APPLICATIONS *Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY...
Description Silicon NPN Power Transistor

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    2SC2707

Inchange Semiconductor Company Limited
Part No. 2SC2707
OCR Text ...er Breakdown Voltage: V(BR)CEO= 180v(Min.) *High Power Dissipation *Complement to Type 2SA1147 APPLICATIONS *Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER ...
Description Silicon NPN Power Transistor

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    2SD2101 2SD2101-15

Quanzhou Jinmei Electronic Co.,Ltd.
Quanzhou Jinmei Electro...
Part No. 2SD2101 2SD2101-15
OCR Text ...A ;IB=10mA IC=10A ;IB=100mA VCB=180v; IE=0 VCE=180v; RBE= IC=5A ; VCE=3V 1500 MIN 7 200 200 170 1.5 3.0 2.0 3.5 10 50 |I |I TYP. MAX UNIT V V V V V V V V A A SYMBOL VEBO VCBO VCEO VCEO(sus) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 ICBO ICEO ...
Description Silicon NPN Power Transistors

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    2SD2101

Savantic, Inc.
Part No. 2SD2101
OCR Text ...A ;IB=10mA IC=10A ;IB=100mA VCB=180v; IE=0 VCE=180v; RBE=; IC=5A ; VCE=3V 1500 MIN 7 200 200 170 1.5 3.0 2.0 3.5 10 50 TYP. MAX UNIT V V V V V V V V A A SYMBOL V(BR)EBO V(BR)CBO V(BR)CEO VCEO(SUS) VCE(sat-1) VCE(sat)-2 VBE(sat-1) VBE(sat...
Description Silicon NPN Power Transistors

File Size 110.33K  /  3 Page

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    MASW-001150-1316 MASW-001150-13160P MASW-001150-13160W

M/A-COM Technology Solutions, Inc.
Part No. MASW-001150-1316 MASW-001150-13160P MASW-001150-13160W
OCR Text ...SD ESD Absolute Maximum 100mA - 180v -55C to +125C -55C to +150C +175C 500MHz, 4W 500MHz, 50W +260C for 30 seconds Class 1A -- HBM Class M3 -- MM Class C3 -- CDM Applications This PIN diode series-shunt switch element is particularly ad...
Description SURMOUNT PIN Diode Switch Element with Thermal Terminal

File Size 209.50K  /  9 Page

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    2N6277

Inchange Semiconductor Company Limited
Part No. 2N6277
OCR Text ... A A mA mA w w w. VCE= 180v; VBE(off)=1.5V VCE= 180v; VBE(off)=1.5V; TC=150 VEB= 6V; IC= 0 IC= 1A; VCE= 4V sem isc .cn i 50 30 10 30 1.8 50 10 1.0 0.1 IC= 20A; VCE= 4V IC= 50A; VCE= 4V 120 IC= 1A; VCE= 10V IE=...
Description Silicon NPN Power Transistor

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    2SC3514

Inchange Semiconductor Company Limited
Part No. 2SC3514
OCR Text ...er Breakdown Voltage: V(BR)CEO= 180v(Min) *Good Linearity of hFE *Complement to Type 2SA1383 APPLICATIONS *Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO ...
Description Silicon NPN Power Transistor

File Size 215.26K  /  2 Page

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For 180v Found Datasheets File :: 735    Search Time::1.5ms    
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