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23m Datasheet PDF File

For 23m Found Datasheets File :: 204 Search Time::1.234ms
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				Productwell Precision Elect.CO.,LTD
Part No.	100 120 1R2 102 180 6R8 470 2R1 220 4R7 680 3R9 150 560
OCR Text	...6 M 100 K 18m 5.70 7.96 M 100 K 23m 4.90 7.96 M 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 100 K 28m 38m 50m 57m 66m 80m 97m 132m 150m 190m 220m 260m 308m 0.38 0.53 0.62 0.70 ...
Description	SHIELDED SMT POWER INDUCTORS
File Size	173.55K / 4 Page	View it Online	Download Datasheet

				UTC
Part No.	50N06
OCR Text	...O-220F FEATURES * RDS(ON) = 23m@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability ...
Description	N-CHANNEL POWER MOSFET
File Size	169.29K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	3710S IRF3710L IRF3710LPBF IRF3710S IRF3710SPBF IRF3710STRL IRF3710STRR
OCR Text	...IRF3710L VDSS = 100V RDS(on) = 23m G S ID = 57A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi...
Description	100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Search --To IRF3710S
File Size	572.23K / 10 Page	View it Online	Download Datasheet

				SUMIDA CORPORATION. Sumida, Corp.
Part No.	RCH-895 RCH-855
OCR Text	...(A) A (A) IV 18m 22m 13.7m 23m 4.5 3.1 15.3m 5.0 2.9 28m 15.3m 26m 4.0 2.7 17.2m 4.7 2.8 16.4m 31m 3.6 2.5 19.1m 4.5 2.7 18.5m 34m 3.4 2.4 21.2m 4.2 2.6 20.2m 39m 3.2 2.2 22.2m 42m 2.9 2.1 43m 24.2m 45m 70m 80m 90m 100m 120m 140m 170m ...
Description	POWER INDUCTORS POWER INDUCTORS <PIN TYPE> 功率电感\u003cPIN TYPE\u003e
File Size	166.72K / 2 Page	View it Online	Download Datasheet

				Ningbo Foryard Optoelectronics Co., Ltd.
Part No.	FYL-10023mUGC1B
OCR Text	...fyl fyl 100 100 100 10023 2323 23m mm mugc1b ugc1b ugc1b ugc1b features: packageconfiguration highinstensity generalpurposeleads rohsco...
Description	LED LAMP
File Size	143.96K / 3 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	ZXTN25012EFH
OCR Text	...(sat) < 32mv @ 1a r ce(sat) = 23m p d = 1.25w description advanced process capability and package design have been used to maximize the power handling and pe rformance of this small outline transistor. the compact size and ratings of ...
Description	12V, SOT23, NPN medium power transistor
File Size	370.66K / 6 Page	View it Online	Download Datasheet

				Rohm
Part No.	BD3500FVM BD3501FVM BD3504FVM08 BD3502FVM
OCR Text	...t response 3 0a(0.6a/ s) v=23m vout iout (1.075v ) (1a/div) vout iout (bd3502fvm) (1a/div) vout iout (bd3502fvm) (1a/div) vout iout (bd3501fvm) (1a/div) vout iout (bd3501fvm) (1a/div) vout iout (bd3500fvm) (1a/div) vout iout (bd350...
Description	Ultra Low Dropout Linear Regulator Controllers for PC Chipsets
File Size	686.30K / 17 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0157D
OCR Text	... = 100v,i d =57a r ds(on) < 23m ? @ v gs =10v special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and unifor...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	296.64K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE0157
OCR Text	... = 100v,i d =57a r ds(on) < 23m ? @ v gs =10v (typ:13.3m ? ) special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stab...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	361.92K / 7 Page	View it Online	Download Datasheet

For 23m Found Datasheets File :: 204 Search Time::1.234ms
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