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  250s Datasheet PDF File

For 250s Found Datasheets File :: 1919    Search Time::1.844ms    
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    MGE UPS Systems
Part No. APT35GP120B
OCR Text ...pt35gp120b v ge = 15v. 250s pulse test <0.5 % duty cycle t c =25c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty...
Description High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com 电压200伏室的Vce(on):均为3.9V编号(续):四十六安培|超快IGBT的家

File Size 80.36K  /  6 Page

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    APTGF15H120T1G

Microsemi Corporation
Part No. APTGF15H120T1G
OCR Text ...ollector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse tes...
Description Full - Bridge NPT IGBT Power Module

File Size 315.96K  /  6 Page

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    HGTG30N60A4

Fairchild Semiconductor
Part No. HGTG30N60A4
OCR Text ....5%, VGE = 12V PULSE DURATION = 250s Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 40 40 30 30 20 TJ = 125oC TJ = 150oC TJ = 25oC ...
Description 600V, SMPS Series N-Channel IGBT

File Size 137.91K  /  8 Page

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    APTGF15A120T1G

Microsemi Corporation
Part No. APTGF15A120T1G
OCR Text ...ollector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse tes...
Description Phase leg NPT IGBT Power Module

File Size 313.50K  /  6 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS9N90FT-O-F-N-B
OCR Text ... 150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 V DS [V] V G S [V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage ...
Description N-CHANNEL MOSFET

File Size 845.36K  /  8 Page

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    HGTG30N60C3D FN4041

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTG30N60C3D FN4041
OCR Text ... 12 TC = -40oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V 150 125 9.5V 100 75 50 7.0V 25 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 9.0V 8.5V 8.0V 7.5V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC VGE = 15.0V 12.0V 1...
Description 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system

File Size 115.87K  /  7 Page

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    HGTG30N60C3 FN4042

INTERSIL[Intersil Corporation]
Part No. HGTG30N60C3 FN4042
OCR Text ...(V) TC = -40oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 150 VGE = 15.0V 125 9.5V 100 75 50 25 0 9.0V 8.5V 8.0V 7.0V 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7.5V 10 12.0V 10...
Description From old datasheet system
63A, 600V, UFS Series N-Channel IGBT

File Size 98.55K  /  6 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS9N50FT-O-F-N-B JCS9N50CT-O-C-N-B JCS9N50T
OCR Text ... 150 1 25 1 Notes: 1. 250s pulse test 2. TC=25 0.1 Notes: 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.00 0.95 0.90 Body Diode For...
Description N-CHANNEL MOSFET

File Size 1,351.73K  /  10 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS840F-O-F-N-B JCS840S-O-S-N-B JCS840C-O-C-N-B JCS840B-O-B-N-B
OCR Text ...] 10 150 1 Notes 1. 250s pulse test 2. TC=25 0.1 25 Notes 1.250s pulse test 2.VDS=40V 6 8 1 2 4 1 VDS[V] 10 V GS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.00 Body Diode ...
Description N-CHANNEL MOSFET

File Size 831.15K  /  12 Page

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For 250s Found Datasheets File :: 1919    Search Time::1.844ms    
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