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  250ua Datasheet PDF File

For 250ua Found Datasheets File :: 5560    Search Time::1.063ms    
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    AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL

Anachip Corp
ETC
Part No. AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL
OCR Text ...nce Test Conditions VGS=0V, ID=-250ua VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS= VGS, ID=-250ua VDS=-16V, VGS=0V VGS=8V, VDS=0V VDS=-5V, VGS=-10V VDS=-5V, ID=-2.8A VDS=-6V, ID=-2.8A, VGS=-4.5V VDD=-6V, RL=6, ID=-1A, VGEN=-4.5V, RG=6 VDS=-...
Description V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S

File Size 129.04K  /  4 Page

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    AF2302N AF2302NWL AF2302NW AF2302NWA AF2302NWLA

ANACHIP[Anachip Corp]
Part No. AF2302N AF2302NWL AF2302NW AF2302NWA AF2302NWLA
OCR Text ...ance Test Conditions VGS=0V, ID=250ua VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VDS= VGS, ID=250ua VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=5V, VGS=4.5V VDS=5V, ID=3.6A VDS=10V, ID=3.6A, VGS=4.5V VDD=10V, RL=10, ID=1A, VGEN=4.5V, RG=6 VDS=10V, VGS=0V, ...
Description 20V N-Channel Enhancement Mode MOSFET

File Size 129.50K  /  4 Page

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    AP4435M

http://
Advanced Power Electronics Corp.
Part No. AP4435M
OCR Text ... Test Conditions VGS=0V, ID=-250ua Min. Typ. Max. Units -30 -1 -0.037 20 35 -3 -1 -25 100 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) ...
Description P-CHANNEL ENHANCEMENT MODE

File Size 77.00K  /  6 Page

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    IRF40N03

ETC
International Rectifier
Part No. IRF40N03
OCR Text ...0 75 100 125 150 V DS =V G S ID=250ua F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250ua 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) ...
Description N-CHANNEL Power MOSFET

File Size 82.20K  /  4 Page

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    STD1224N

SamHop Microelectronics Corp.
Part No. STD1224N
OCR Text ...ol Condition VGS = 0V, ID = 250ua VDS = 18V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250ua VGS =4.5V, ID = 6.0A VGS =2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 6.0A Min Typ C Max Unit 24 1 100 0.7 1.2 60 90 15 10 528 ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 680.17K  /  8 Page

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    STD20N03L

SamHop Microelectronics Corp.
Part No. STD20N03L
OCR Text ...ol Condition VGS = 0V, ID = 250ua VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250ua VGS = 10V, ID =20A VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 1 100 1 1.5 17 30 50 8 614 83 61 2....
Description N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

File Size 692.21K  /  8 Page

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    AP28G45EM

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP28G45EM
OCR Text ...ransfer Capacitance VCE=VGE, IC=250ua IC=40A VCE=360V VGE=4.5V VCC=200V IC=15A RG=10 VGE=5V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on...
Description N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT

File Size 70.02K  /  3 Page

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    AP4501M

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP4501M
OCR Text ...2 Test Conditions VGS=0V, ID=250ua Min. Typ. Max. Units 30 1 0.02 28 42 3 1 25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-So...
Description N AND P-CHANNEL ENHANCEMENT N和P沟道强化

File Size 111.47K  /  11 Page

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    SGP6N60UFD SGP6N60UFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGP6N60UFD SGP6N60UFDTU
OCR Text ... Leakage Current VGE = 0V, IC = 250ua VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC...
Description Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT

File Size 568.99K  /  8 Page

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