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![GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q-5I GS820E32T-6I GS820E32Q-117 GS820E32A GS820E32Q-133 GS820E32Q-133I](Maker_logo/list_of_unclassifed_manufacturers.GIF)
GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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Part No. |
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q-5I GS820E32T-6I GS820E32Q-117 GS820E32A GS820E32Q-133 GS820E32Q-133I GS820E32Q-138 GS820E32Q-138I GS820E32Q-4I GS820E32T-117 GS820E32T-4I GS820E32T-5I GS820E32Q-100 GS820E32Q-6I GS820E32Q-66 GS820E32T-150 GS820E32T-133 GS820E32T-133I GS82032A GS820E32T-138I GS820E32Q-150I GS820E32T-150I GS820E32GT-5I
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OCR Text |
...cle 6.6ns 3-1-1-1 tKQ 3.8ns IDD 270ma Flow tCycle 10.5ns Through tKQ 9ns 2-1-1-1 IDD 170mA -138 -133 -117 -100 -66 7.25ns 7.5ns 8.5ns 10ns 12.5ns 4ns 4ns 4.5 5ns 6ns 245mA 240mA 210mA 180mA 150mA 15ns 15ns 15ns 15ns 20ns 9.7ns 10ns 11ns 12n... |
Description |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
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File Size |
349.01K /
23 Page |
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it Online |
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Tripath
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Part No. |
BRIDGED-RB-TA3020
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OCR Text |
...W 1000W 650W 900W 640kHz 605kHz 270ma 45mA 110mA 110mA 88% 83% 300uV
PO
+Freqsw -Freqsw VN10Iq V5Iq VPPIq VNNIq eOUT
6
Bridged RB-TA3020-1-3 - MC/1.0/06-01, EAD003
Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on
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Description |
Reference Board
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File Size |
982.08K /
36 Page |
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it Online |
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Mimix Broadband, Inc.
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Part No. |
XR1002-QB-EV1 XR1002-QB-0N0T XR1002-QB-0N00
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OCR Text |
...s may be as high as Vd=5.5V, Id=270ma with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 135mA. Attenuator bias, Vg3, can be adjusted from 0.0 to -1.2V with 0.0V prov... |
Description |
18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm 18.0-30.0 GHz的砷化镓接收机QFN封装,为7x7 mm
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File Size |
738.60K /
10 Page |
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it Online |
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Price and Availability
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