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  2a 650v Datasheet PDF File

For 2a 650v Found Datasheets File :: 197    Search Time::1.156ms    
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    FSL126MRT

Fairchild Semiconductor
Part No. FSL126MRT
OCR Text ... w-forming - 40c ~ +125c 1.2a 6.2 30w 40w 17w 25w ka5m0265rydtu notes: 1. pb-free package per jedec j-std-020b. 2. the junction temperature can limit the maximum output power. 3. 230v ac or 100/115v ac with voltage doubler. ...
Description Green-Mode Fairchild Power Switch (FPS?

File Size 876.69K  /  13 Page

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    HFP8N65S

SemiHow Co.,Ltd.
Part No. HFP8N65S
OCR Text ...n temperature 2. L=7.3mH, IAS=7.2a, VDD=50V, RG=25, Starting TJ =25C 3. ISD7.2a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description 650v N-Channel MOSFET

File Size 842.20K  /  8 Page

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    HFS8N65S

SemiHow Co.,Ltd.
Part No. HFS8N65S
OCR Text ...n temperature 2. L=7.3mH, IAS=7.2a, VDD=50V, RG=25, Starting TJ =25C 3. ISD7.2a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description 650v N-Channel MOSFET

File Size 784.25K  /  7 Page

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    HFS5N65S

SemiHow Co.,Ltd.
Part No. HFS5N65S
OCR Text ... temperature 2. L=18.9mH, IAS=4.2a, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.2a, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV...
Description 650v N-Channel MOSFET

File Size 774.03K  /  7 Page

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    AP04N70BF-A

http://
Advanced Power Electronics Corp.
Part No. AP04N70BF-A
OCR Text ... (Tj=150 C) o o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Ga...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 59.50K  /  4 Page

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    2N6931 2N6932

Inchange Semiconductor Company Limited
Part No. 2N6931 2N6932
OCR Text ...specified PARAMETER 2N6931 IC=0.2a ;L=25mH 2N6932 V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage...650v; VBE=-1.5V TC=100ae VEB=8V; IC=0 IC=10A ; VCE=3V f=1MHz;VCB=10V CONDITIONS 2N6931 2N6932 ...
Description Silicon NPN Power Transistors

File Size 117.02K  /  3 Page

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    AP04N70BP-A

Advanced Power Electronics Corp.
Part No. AP04N70BP-A
OCR Text ... (Tj=150 C) o o VGS=10V, ID=2a VDS=VGS, ID=250uA VDS=10V, ID=2a VDS=600V, VGS=0V VDS=480V,VGS=0V VGS=30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Ga...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 68.49K  /  6 Page

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    Advanced Power Electronics
Part No. 04N70BF-A
OCR Text ...e on-resistance v gs =10v, i d =2a - - 2.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - -...
Description Search --To AP04N70BF-A

File Size 116.29K  /  4 Page

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    SavantIC
Part No. 2N6674
OCR Text ...taining voltage 2n6675 i c =0.2a ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =2a 1.0 v v cesat-2 c...650v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc cu...
Description (2N6674 / 2N6675) Silicon Power Transistor

File Size 138.42K  /  3 Page

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    2N6931 2N6932

Quanzhou Jinmei Electronic Co.,Ltd.
Part No. 2N6931 2N6932
OCR Text ...taining voltage 2n6932 i c =0.2a ;l=25mh 400 v v (br)ebo emitter-base breakdown voltage i e =50ma ;i c =0 8 v v cesat collec...650v; v be =-1.5v t c =100 ?? 0.1 1.0 ma i ebo emitter cut-off current v eb =8v; i c =...
Description Silicon NPN Power Transistors

File Size 40.54K  /  3 Page

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