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Infineon Technologies A...
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| Part No. |
SKB15N60
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| OCR Text |
...10a 15a 20a 25a 30a 35a 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1.2mj 1.4mj 1.6mj 1.8mj e on * e off e ts * e , switching energy losses 0 ? 20 ? 40 ? 60 ? 80 ? 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1.2mj 1.4mj e ts * e on * e off i c , ... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
1,149.48K /
13 Page |
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Infineon Technologies A... INFINEON[Infineon Technologies AG] SIEMENS A G
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| Part No. |
SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
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| OCR Text |
...E, SWITCHING ENERGY LOSSES
1.2mj 1.0mJ 0.8mJ
Ets*
Eon* 0.6mJ Eoff 0.4mJ 0.2mj 0.0mJ 0C
R,(1/W) 0.1882 0.3214 0.1512 0.0392
R1
, (s)= 0.1137 2.24*10-2 7.86*10-4 9.41*10-5
R2
10 K/W single pulse
-3
C 1= 1/R 1
C 2=... |
| Description |
Fast S-IGBT in NPT-technology Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技 Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
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| File Size |
263.73K /
12 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB06N60HS
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| OCR Text |
...0 mJ Eoff
0,3mJ
Eon*
0,2mj
Eoff
0,1mJ
0,0mJ 0,0A
2,5A
5,0A
7,5A
10,0A
0
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (indu... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
353.14K /
14 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW25N120
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| OCR Text |
...n* 4mJ Eoff
10mJ Eoff 5mJ
2mj
0mJ
0A
20A
40A
60A
0mJ
0
10
20
30
40
50
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
333.32K /
13 Page |
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Infineon Technologies A...
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| Part No. |
SGD02N120 SGB02N120 SGI02N120
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| OCR Text |
... 50 100 150 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj 0.5mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce =... |
| Description |
Fast S-IGBT in NPT-technology
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| File Size |
383.19K /
12 Page |
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Infineon
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| Part No. |
G03H1202
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| OCR Text |
...
1
0.3mJ
Eoff Eon
1
0.2mj
0.0mJ 0A 2A 4A
0
50
100
150
200
250
t4U.com
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 8... |
| Description |
High Speed 2-Technology
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| File Size |
405.50K /
10 Page |
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Infineon
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| Part No. |
G50N60HS
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| OCR Text |
...1.0 mJ 0.5 mJ Eoff Eon* Ets*
2mj
E off
1mJ
0mJ
0A
20A
40A
60A
80A
0.0 mJ
0
3
6
9
12
15
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (i... |
| Description |
Search --To SGW50N60HS
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| File Size |
863.62K /
11 Page |
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