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  30.5v Datasheet PDF File

For 30.5v Found Datasheets File :: 157944    Search Time::2.531ms    
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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...ation voltage VCE(sat) (V) 100 30 10 3 Ta=75C 1 25C 0.3 -25C 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC IC/IB=10 Collector power dissipa...5V Base to emitter saturation voltage VBE(sat) (V) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-2...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ... Ratings 500 500 400 7 6 3 1.2 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0...5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A,...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...ltage VCE(sat) (V) 100 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (...5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturat...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...ltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 -25C 0.1 0.03 0.01 0.01 0.03 25C TC=100C VCE(sat) -- IC Collector power dissipation PC (...5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturat...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5036 2SC5036A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5036 2SC5036A
OCR Text ...900 1000 900 1000 800 7 2 1 0.3 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base ...5V, IC = 0.1A VCE = 5V, IC = 0.2A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A,...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.72K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...ltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 25C 0.01 0.01 0.03 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (...5V 100 fT -- IC VCE=5V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forwa...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ... power dissipation PC (W) 35 30 25 20 15 10 5 (2) (3) 0 0 20 40 Collector current IC (A) 1.6 1.4 1.2 1.0 60mA 0.8 0.6 0.4 0.2 0 40m...5V 1000 300 100 30 10 3 1 0.3 1 0.01 0.1 0.001 0.003 fT -- IC VCE=10V f=10MHz TC=25C Base to ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...ltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) ...5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) For...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ....5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 3 / div. 60 -150 -30 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V ,...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ....5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 5 / div. 60 -150 -30 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V ,...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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For 30.5v Found Datasheets File :: 157944    Search Time::2.531ms    
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