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STMicroelectronics
NUMONYX
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| Part No. |
NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A2DN1T NAND512W4A2DN6T
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| OCR Text |
... 60ns 50ns Page Program Typical 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 300s 200s 2ms 2ms TSOP48 VFBGA63 (8.5x15x1 mm) 2ms TSOP48 VFBGA63 (9x11x1 mm) 2ms TSOP48 VFBGA63 (9x11x1 mm) Block Erase Typical Package
... |
| Description |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
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| File Size |
62.74K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFC2P100
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| OCR Text |
...5V VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
-ID, DRAIN CURRENT (A)
5 4 3 2 1 0 0.0
VGS = -3.5V VGS = -3.0V
VGS = -2.5V
VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX
0.5
1.0
1.5
2.0
2.5
5... |
| Description |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
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| File Size |
289.26K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFS6N754
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| OCR Text |
...er 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
3 FDFS6N754 Rev. A
www.fairchildsemi.com
FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode
Typical Characteristics TJ
20
ID, DRAIN CURRENT (A)
VGS... |
| Description |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM
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| File Size |
323.42K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM3300NZ_07 FDM3300NZ
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDM3300NZ Rev.F
2
www.fairchildsemi.com
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwi... |
| Description |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
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| File Size |
188.85K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM6296_07 FDM6296
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDM6296 Rev.E
2
www.fairchildsemi.com
FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS = 10V VGS ... |
| Description |
Single N-Channel Logic-Level PowerTrench㈢ MOSFET 30V,11.5A, 10.5mヘ
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| File Size |
182.83K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMC5614P
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMC5614P Rev.C
2
www.fairchildsemi.com
FDMC5614P P-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON... |
| Description |
P-Channel PowerTrench MOSFET
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| File Size |
214.26K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMS2572 FDMS257207
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| OCR Text |
...
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMS2572 Rev.C2
2
www.fairchildsemi.com
FDMS2572 N-Channel UltraFET Trench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
35
ID, DRAIN CURRENT (A)
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| Description |
N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
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| File Size |
499.37K /
7 Page |
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it Online |
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Diodes, Inc.
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| Part No. |
BAS70-06-7 BAS70-05-7
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| OCR Text |
... voltage v f 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r =... |
| Description |
DIODE SCHTKY CA 70V 200MW SOT-23 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHTKY CC 70V 200MW SOT-23 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
66.76K /
3 Page |
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it Online |
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Diodes, Inc.
DIODES INC
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| Part No. |
BAS70W-06-7
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| OCR Text |
...(note 2) v f 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v total capacitance c t 2.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 5.0 ns i f = i r = ... |
| Description |
0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE ULTRA SMALL, PLASTIC PACKAGE-3
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| File Size |
66.95K /
3 Page |
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it Online |
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