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  38a Datasheet PDF File

For 38a Found Datasheets File :: 548    Search Time::3.156ms    
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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
OCR Text 38a 0.260 POWER MOS 7 (R) R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by si...
Description 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 101.61K  /  5 Page

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    IRF5210SPBF IRF5210LPBF

International Rectifier
Part No. IRF5210SPBF IRF5210LPBF
OCR Text ...V RDS(on) = 60m G S ID = -38a D Description Features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely...
Description HEXFET Power MOSFET

File Size 694.25K  /  10 Page

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    IRFPS38N60LPBF

International Rectifier
Part No. IRFPS38N60LPBF
OCR Text ...p. Trr typ. ID 600V 120m 170ns 38a Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer ...
Description HEXFET Power MOSFET

File Size 197.18K  /  9 Page

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    IRGP4266PBF

International Rectifier
Part No. IRGP4266PBF
OCR Text ... 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce...
Description Insulated Gate Bipolar Transistor

File Size 880.51K  /  11 Page

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    Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JLL_03 APT10026JLL APT10026JLL03
OCR Text ...1 MHz VGS = 10V VDD = 500V ID = 38a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38a @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38a, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 38a, RG = ...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.27K  /  5 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JFLL_03 APT10026JFLL APT10026JFLL03
OCR Text ...1 MHz VGS = 10V VDD = 500V ID = 38a @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38a @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 38a, RG = 3 6 INDUCTIVE SWITCHING @ 125C VDD = 667V VGS = 15V ID = 38a, RG = 3...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.67K  /  5 Page

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    IXTP76N075T IXTA76N075T

IXYS Corporation
Part No. IXTP76N075T IXTA76N075T
OCR Text ... r ds(on) normalized to i d = 38a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 76a i d = 38a f...
Description Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated

File Size 172.52K  /  5 Page

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For 38a Found Datasheets File :: 548    Search Time::3.156ms    
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