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Eupec
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| Part No. |
BSM300GB120DLC
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| OCR Text |
... Tvj = 25C
IGES
-
-
400
nA
prepared by: MOD-D2; Mark Munzer approved by: SM TM; Wilhelm Rusche
date of publication: 200...600
500
Tvj = 25C Tvj = 125C
400
IC [A]
300
200
100
0 0,0 0,5 1,0 1,5 2,0 2,... |
| Description |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
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| File Size |
172.18K /
9 Page |
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it Online |
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Vishay Semiconductors IRF[International Rectifier]
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| Part No. |
60EPF10 60EPF12 60CPF10 60CPF12 60EPF10PBF
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| OCR Text |
...cteristics
900 800 700 600 500 400 6 0 .PF.. Se rie s 300 0 .0 1 0.1 Pu lse Tra in D ura tion (s) 1
Maxim um No n Repetitive Surge Curre nt V ersus Pulse Train D uration .
700
In itia l T J = 150 C @ 60 H z 0.0083 s @ 50 H z 0.0100 ... |
| Description |
DIODE 60 A, 1000 V, SILICON, RECTIFIER DIODE, TO-247AC, MODIFIED TO-247AC, 3 PIN, Rectifier Diode FAST SOFT RECOVERY RECTIFIER DIODE 1200v Fast Recovery Diode in a TO-247AC package 1000V Fast Recovery Diode in a TO-247AC package 1000V Fast Recovery Diode in a TO-247AC (2-Pin) package 1200v Fast Recovery Diode in a TO-247AC (2-Pin) package
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| File Size |
205.77K /
8 Page |
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it Online |
Download Datasheet
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BSM200GT120DN2 200T12N2 C67070-A2519-A67
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| OCR Text |
...rrent, tp = 1 ms
ICpuls
600 400
TC = 25 C TC = 125 C
Power dissipation per IGBT
Ptot
1400
W + 150 -55 ... + 150 0.09 0.18 2500 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal res... |
| Description |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(焊电源模块3相全桥包括快速滑行二极管 From old datasheet system
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| File Size |
180.01K /
9 Page |
View
it Online |
Download Datasheet
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