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SIEMENS[Siemens Semiconductor Group]<br>SIEMENS AG<br>SIEMENS A G<br>
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Part No. |
bAT15-013 bAT15-013S bAT15-033 bAT15-034 bAT15-043 bAT15-063 bAT15-064 bAT15-073 bAT15-093 bAT15-094 bAT15-103 bAT15-113 bAT15-114 bAT15-123 bAT15-124 Q62702A1180 Q62702A1178 bAT15 bAT15-124S bAT15-013ES bAT15-013H bAT15-013P bAT15-014 bAT15-014ES bAT15-014H bAT15-014P bAT15-014S bAT15-033ES bAT15-033H bAT15-033P bAT15-033S bAT15-034ES bAT15-034H bAT15-034P bAT15-034S bAT15-043ES bAT15-043H bAT15-043P bAT15-043S bAT15-044 bAT15-044ES bAT15-044H bAT15-044P bAT15-044S bAT15-063ES bAT15-063H bAT15-063P bAT15-063S bAT15-064ES bAT15-064H bAT15-064P bAT15-064S bAT15-073ES bAT15-073H bAT15-073P bAT15-074 bAT15-074ES bAT15-074H bAT15-074P bAT15-074S bAT15-093ES bAT15-093H bAT15-093P bAT15-093S bAT15-094ES bAT15-094H bAT15-094P bAT15-094S bAT15-103ES bAT15-103H bAT15-103P bAT15-103S bAT15-104 bAT15-104ES bAT15-104H bAT15-104P bAT15-104S bAT15-113ES bAT15-113H bAT15-113P bAT15-113S bAT15-114ES bAT15-114H bAT15-114P bAT15-114S bAT15-123ES bAT15-123H bAT15-123P bAT15-123S bAT15-124ES bAT15-124H bAT15-124P bAT15-073S
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Description |
From old datasheet system<br>Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)<br>330MHz buffered Video Switches Crosspoint building blocks<br>Single/Dual/Quad, Wide-bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps<br>500MHz, Low-Power Op Amps<br>bbG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500<br>400MHz, Ultra-Low-Distortion Op Amps<br>250MHz, broadcast-Quality, Low-Power Video Op Amps<br>HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor medium barrier diodes for detector and mixer applications) SILICON, medium bARRIER SCHOTTKY, MIXER DIODE<br>HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器)<br>350MHz, Ultra-Low-Noise Op Amps SILICON, medium bARRIER SCHOTTKY, MIXER DIODE<br>Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, medium bARRIER SCHOTTKY, MIXER DIODE<br>
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File Size |
86.72K /
8 Page |
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Continental Device India, Ltd.<br>CDIL[Continental Device India Limited]<br>Continental Device Indi...<br>
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Part No. |
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y
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Description |
25.000W medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y<br>25.000W medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O<br>25.000W medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O<br>PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体<br>25.000W medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y<br>
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File Size |
135.13K /
3 Page |
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Continental Device India Limited<br>
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Part No. |
C2688bPL CSC2688 CSC2688bPL CSC2688G CSC2688O CSC2688R CSC2688Y
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Description |
10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.<br>10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.<br>10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.<br>10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.<br>10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.<br>10.000W medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.<br>
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File Size |
136.14K /
2 Page |
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Price and Availability
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