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IRF[International Rectifier]
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Part No. |
IRFB4103PBF
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OCR Text |
... --- nH --- pF V GS = 0V V DS = 50v ns
Conditions
V GS = 0V, ID = 250A V GS = 10V, ID = 12a
V m V mV/C A nA S
V/C Reference to 25C, ID = 1mA
e
V DS = V GS, ID = 250A V DS = 200V, V GS = 0V V DS = 200V, V GS = 0V, T J = 125... |
Description |
DIGITAL AUDIO MOSFET
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File Size |
236.51K /
7 Page |
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Fairchild Semiconductor
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Part No. |
HUF76619D3 HUF76619D3S
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OCR Text |
....0mA (Figures 14, 19, 20) VDD = 50v, ID = 18A VGS = 10V, RGS = 12 (Figures 16, 21, 22) VDD = 50v, ID = 12a VGS = 4.5V, RGS = 12 (Figures 15, 21, 22) 10 82 32 42 137 111 ns ns ns ns ns ns
SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time ... |
Description |
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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File Size |
212.31K /
10 Page |
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Kersemi Electronic Co., Ltd...
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Part No. |
IRFR3412 IRFR3412TRR
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OCR Text |
...conductance 25 ??? ??? sv ds = 50v, i d = 29a q g total gate charge ??? 59 89 i d = 29a q gs gate-to-source charge ??? 21 32 n...12a) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the ... |
Description |
Switch Mode Power Supply (SMPS)
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File Size |
3,569.41K /
10 Page |
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International Rectifier, Corp.
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Part No. |
IRG4BC30WPBF
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OCR Text |
...ter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j
irg4bc30wpbf 4 www.irf.com 0.01 0.1 1 10 0.000...12a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.01 0.1 1 10 t , junction temperature (... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12a) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12a条)
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File Size |
578.75K /
8 Page |
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it Online |
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