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  64mx4 Datasheet PDF File

For 64mx4 Found Datasheets File :: 170    Search Time::2.469ms    
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    IBM Microeletronics
Part No. IBM13M64734BCA
OCR Text ...y array. the dimm uses eighteen 64mx4 sdrams in 400 mil tsop packages. the dimm achieves high-speed data-transfer rates of up to 100 mhz by employing a prefetch/pipeline hybrid architecture that synchronizes the output data to a system cloc...
Description 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)

File Size 160.83K  /  20 Page

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    HYM72V12C736BLS4-K HYM72V12C736BLS4-H HYM72V12C736BS4

OKI SEMICONDUCTOR CO., LTD.
Hynix Semiconductor
Part No. HYM72V12C736BLS4-K HYM72V12C736BLS4-H HYM72V12C736BS4
OCR Text 64mx4 sdra m with lvttl, 4 banks & 8k refresh this document is a general product descript ion and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no pat ent licens...
Description 128Mx72|3.3V|K/H|x36|SDR SDRAM - Registered DIMM 1GB 128Mx72 | 3.3 | | x36 | SDRAM的特别提款权-注册1GB的内

File Size 213.21K  /  15 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/LB3 K4H560838D-TC/LA0 K4H561638D-TC/LA0 K4H561638D-TC/LB0 K4H560438D-TC/LB0 K4H560438D-TC/LA2 K4H560438D-TCB3 K4H561638D-TC/LB3 K4H561638D-TC/LA2 K4H560438D-TC/LB3 K4H560438D-TC/LA0
OCR Text ...4fc organization column address 64mx4 a0-a9, a11 32mx8 a0-a9 16mx16 a0-a8 - 3 - 256mb ddr sdram rev. 0.4 may. 2002 bank select timing register a d d r e s s r e g i s t e r r e f r e s h c o u n t e r r o w b u f f e r r o w ...
Description 64M X 4 DDR DRAM, 0.7 ns, PDSO66
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85

File Size 239.34K  /  25 Page

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    K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/LCC K4H561638J-LC/LB3 K4H561638J-LC/LCC K4H560838J-LC/LB3

Samsung semiconductor
Part No. K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/LCC K4H561638J-LC/LB3 K4H561638J-LC/LCC K4H560838J-LC/LB3
OCR Text ... Package Pinout Organization 64mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 A0-A8 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration 5 of 24 Rev...
Description 256Mb J-die DDR SDRAM Specification

File Size 352.76K  /  24 Page

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    HY5DU56822AT

Hynix Semiconductor
Part No. HY5DU56822AT
OCR Text ... and column address table items 64mx4 32mx8 16mx16 organization 16m x 4 x 4banks 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 a0 - a12 column address a0-a9, a11 a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 ba0, ba1 auto prec...
Description DDR SDRAM - 256Mb

File Size 347.44K  /  30 Page

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    HYM72V64C736BLT4-H HYM72V64C736BLT4-K

Hynix Semiconductor
Part No. HYM72V64C736BLT4-H HYM72V64C736BLT4-K
OCR Text 64mx4 sdram with lvttl, 4 banks & 8k refresh this document is a general product description and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no patent licenses ...
Description SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Registered DIMM 512MB

File Size 285.95K  /  14 Page

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    K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-N

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560838E-NCA2 K4H560438E-NCB3 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLB0 K4H560438E-NLB3 K4H560438E-NLB0 K4H560838E-NLB3 K4H560838E-NLA2
OCR Text ... 32 31 30 29 28 Organization 64mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.3 April, 2005 DDR SDRAM...
Description 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
   256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

File Size 216.89K  /  24 Page

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    Mosel Vitelic, Corp.
Part No. V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54C3256164VAT V54C3256404VAB V54C3256404VBT
OCR Text ...os family 3.3v, lvttl interface 64mx4(8k refresh) 4 banks v=lvttl component rev level a=0.17um special feature l=low power tsop component package speed 6 ns 7 ns 8 ns device number b=0.14um description pkg. pin count tsop-ii t 54 6 v54...
Description 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4

File Size 756.86K  /  52 Page

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