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8.7a Datasheet PDF File

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				Silikron Semiconductor Co.,LTD.
Part No.	SSF3626
OCR Text	...uantity ssf3626 ssf3626 sop-8 ?330mm 12mm 25 00 units absolute maximum ratings(ta=25 unless otherwise noted) parameter symbol ...7a 10 ns total gate charge q 9 nc g gate-source charge q gs 1.8 nc v =15v,i g...
Description	PWM applications
File Size	326.46K / 5 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD.
Part No.	SSF3620
OCR Text	...uantity ssf3620 ssf3620 sop-8 ?330mm 12mm 25 00 units absolute maximum ratings(ta=25 unless otherwise noted) parameter symbol ...7a r < 30m ? @ v ds(on) gs =4.5v r < 22m ? @ v ds(on) gs =10v high power and current handi...
Description	PWM applications
File Size	327.11K / 5 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SMK0780FD
OCR Text	8 smk0780fd advanced n-ch power mosfet switching regulator application features ? high voltage: bv dds =800v ? low gate cha...7a, r g =25 ? - 40 - ns rise time (note 3,4) t r - 110 - turn-off delay time (note 3,4) t...
Description	SWITCHING REGULATOR APPLICATION
File Size	295.37K / 8 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SMK0765FJ
OCR Text	... g fs v ds =10v, i d =3.5a - 8.1 - s input capacitance ciss v gs =0v, v ds =25v, f=1mhz - 1006 1258 pf output capacitance coss ...7a r g =25 ? - 18 - ns rise time t r - 19 - turn-off delay time t d(off) - 72 - fall ...
Description	SWITCHING REGULATOR APPLICATIONS
File Size	424.41K / 8 Page	View it Online	Download Datasheet

				Rohm
Part No.	MP6M11
OCR Text	...75a, v dd 15v rise time t r -8-nsv gs =10v turn-off delay time t d(off) - 18 - ns r l =8.6 ? fall time t f -3-nsr g =10 ? total gate char...7a, v gs = ? 4.5v - 110 155 i d = ? 1.7a, v gs = ? 4.0v forward transfer admittance l y fs l 2.5 - ...
Description	4V Drive Nch Pch MOSFET
File Size	1,287.09K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGW02N12006
OCR Text	... t c = 100 c i c 6.2 2.8 pulsed collector current, t p limited by t jmax i cpuls 9.6 turn off safe operating area v ce ...7a t c , case temperature t c , case temperature figure 3. power dissipation as a functi...
Description	Fast IGBT in NPT-technology
File Size	807.37K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMN20EN
OCR Text	...(1) v gs = 2.7 v (2) v gs = 2.8 v (3) v gs = 3.0 v (4) v gs = 3.2 v (5) v gs = 4.5 v (6) v gs = 10 v i d = 6.4 a (1) t j = 150 c (2) t j = 25 c fig 8. drain-source on-state resistance as a function of drain current; typical values...
Description	30 V, 6.7 A N-channel Trench MOSFET
File Size	806.20K / 15 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS14SM-18A
OCR Text	... 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ......................................................7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 900...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.33K / 4 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM34814AA-N
OCR Text	...ate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view) 2 elm34814aa-n electrical characteristics parameter symbol condit...7a 15 23 m 1 vgs =4. 5v, id =6 a 21 30 m forward transconductance gfs vds = 15v, id =5 a 16 s 1 diod...
Description	Dual N-channel MOSFET
File Size	336.95K / 4 Page	View it Online	Download Datasheet

				ELM Technology Corporation
Part No.	ELM34812AA-N
OCR Text	...ate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view) 2 elm34812aa-n electrical characteristics parameter symbol condit...7a 15 21 m 1 vgs =2. 5v, id =6 a 21 35 m forward transconductance gfs vds = 5v, id =7 a 37 s 1 diode...
Description	Dual N-channel MOSFET
File Size	358.18K / 4 Page	View it Online	Download Datasheet

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