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For b s Found Datasheets File :: 232107 Search Time::2.422ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2sD661 2sD661A
OCR Text	...60 VCE=5V Ta=25C 140 IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 120 100 Collector current IC (mA) 400 Ib=350A 300A 250A 120 100 80 60 40 20 0 300 80 60 40 20 200A 150A 100A 50A ...
Description	silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)<br>
File Size	50.15K / 3 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2sD667 2sD667A
OCR Text	... I C = 500 mA2 I C = 500 mA, I b = 50 mA2 VCE = 5 V, I C = 150 mA2 VCE = 5 V, I C = 150 mA2 VCb = 10 V, IE = 0, f = 1 MHz Typ -- -- -...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description	silicon NPN Epitaxial npn型硅外延<br>silicon NPN Transistor<br>
File Size	31.22K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sD669 2sD669A sD669
OCR Text	..., IC = 500 mA2 I C = 500 mA, I b = 50 mA2 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 150 mA2 VCb = 10 V, IE = 0, f = 1 MHz Min 180 120 5...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description	silicon NPN Epitaxial<br>
File Size	35.10K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sD768 2sD768K
OCR Text	....0 IC/Ib = 200 500 = 500 I C/I b 200 switching Time vs. Collector Current TC = 25C 3 tstg ton tf VCC = 30V IC = 500 Ib1 = -500 Ib2...s) 1,000 (ms) TC = 25C 1 to 1,000 s 1 to 1,000 ms 4 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 ...
Description	silicon NPN Epitaxial<br>
File Size	35.66K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sD787 2sD788
OCR Text	...lector output capacitance Note: b 100 to 200 C 160 to 320 Cob 1. The 2sD787 and 2sD788 are grouped by h FE as follows. D 250 to 500 E 400...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description	silicon NPN Epitaxial<br>
File Size	30.38K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sD789
OCR Text	...lector output capacitance Note: b 100 to 200 C 160 to 320 D 250 to 500 V(bR)EbO I CbO I EbO hFE* 100 -- -- -- E VCE(sat) fT Cob V M...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description	silicon NPN Transistor<br>silicon NPN Epitaxial<br>
File Size	30.04K / 6 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	2sD882s UTC2sD882s
OCR Text	... -Ib=9mA -Ib=8MA -Ib=7mA s/ b 8 0.8 lim ite d D pa si is -Ib=4mA -Ib=3mA -Ib=2mA -Ib=1mA 50 4 n tio 0.4 lim d ite 0 0 4 8 12 16 20 0 -50 0 50 100 0 -50 0 50 100 150 200 -Collector-Emitter voltag...
Description	NPN EPITAXIAL sILICON TRANsIsTOR<br>
File Size	73.22K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2sD968 2sD968A
OCR Text	...CE Ib=20mA 1.2 1.2 IC -- I b Ta=25C 12mA 10mA 8mA 6mA 1.0 VCE=10V Ta=25C Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portio...
Description	silicon NPN epitaxial planer type(For low-frequency driver amplification)<br>
File Size	37.75K / 2 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2sD973A 2sD973 2sD0973
OCR Text	...0 1.2 VCE=10V Ta=25C IC -- I b Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 1.00...
Description	silicon NPN epitaxial planer type small signal transistor<br>silicon NPN epitaxial planer type(For low-frequency power amplification) 1000 mA, 25 V, NPN, si, sMALL sIGNAL TRANsIsTOR<br>
File Size	47.93K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sD974
OCR Text	...1 mA re ictu ing rP Fo e Arc b Tu 2.0 3 2sD974 Collector to Emitter saturation Voltage vs. base Current Collector to Emitter sa...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description	silicon NPN Epitaxial<br>
File Size	28.76K / 6 Page	View it Online	Download Datasheet

For b s Found Datasheets File :: 232107 Search Time::2.422ms
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