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  depletion-mode Datasheet PDF File

For depletion-mode Found Datasheets File :: 631    Search Time::2.078ms    
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    MC33503 MC33501 MC33501-D MC33501.REV5

ON Semiconductor
Part No. MC33503 MC33501 MC33501-D MC33501.REV5
OCR Text ...V/s is achieved with high speed depletion mode NMOS (DNMOS) and vertical PNP transistors. This device is characterized over a temperature range of -40C to 105C. Circuit Information Input Stage Output Stage One volt rail-to-rail performa...
Description From old datasheet system
1.0 V, Rail-to-Rail, SingleOperational Amplifiers

File Size 203.40K  /  16 Page

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    ICE2QR4765

Infineon Technologies AG
Part No. ICE2QR4765
OCR Text ...th integrated 650V Startup Cell/Depletion CoolMOS(R) In DIP-8 Power Management & Supply Never stop thinking. CoolSET(R) -Q1 I...Mode to reach the lowest standby power requirement <100mW@no load Quasi resonant operation Digital f...
Description Off-Line SMPS Quasi-Resonant PWM Controller with integrated 650V Startup Cell/Depletion CoolMOS In DIP-8

File Size 461.59K  /  21 Page

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    ICE2QR0665

Infineon Technologies AG
Part No. ICE2QR0665
OCR Text ...th integrated 650V Startup Cell/Depletion CoolMOS(R) In DIP-8 Power Management & Supply Never stop thinking. ice2qr0665ice2qr...Mode to reach the lowest standby power requirement <100mW@no load Digital frequency reduction for be...
Description Off-Line SMPS Quasi-Resonant PWM Controller with integrated 650V Startup Cell/Depletion CoolMOS In DIP-8

File Size 498.99K  /  21 Page

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    DS2760BE-025 DS2760AE025 DS2760AE-025 DS2760AX-025 DS2760BE025 DS2760BX-025

MAXIM INTEGRATED PRODUCTS INC
Part No. DS2760BE-025 DS2760AE025 DS2760AE-025 DS2760AX-025 DS2760BE025 DS2760BX-025
OCR Text ...is unaffected by severe battery depletion, accidental shorts or esd events. lockable eeprom becomes rom when locked to provide additional...mode when it senses the closure of a switch to vss on this pin. pin has an internal 1 a pull-up...
Description High-Precision Li Battery Monitor
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16

File Size 290.93K  /  25 Page

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    ICE3B0365JG ICE3B0565JG

Infineon Technologies AG
Part No. ICE3B0365JG ICE3B0565JG
OCR Text ...th integrated 650V Startup Cell/Depletion CoolMOSTM Power Management & Supply Never stop thinking. CoolSETTM-F3 ICE3B0365JG /...Mode Controller with integrated 650V Startup Cell/Depletion CoolMOSTM Product Highlights * Active B...
Description 0.5 A SWITCHING REGULATOR, 76 kHz SWITCHING FREQ-MAX, PDSO12
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS

File Size 482.29K  /  22 Page

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    ICE3B5065I ICE3B0365 ICE3A0365 ICE3A0565Z ICE3A2065P ICE3A2065Z ICE3A1565 ICE3B0565

INFINEON TECHNOLOGIES AG
Part No. ICE3B5065I ICE3B0365 ICE3A0365 ICE3A0565Z ICE3A2065P ICE3A2065Z ICE3A1565 ICE3B0565
OCR Text ...h integrated 650v startup cell/depletion coolmos? never stop thinking. power management & supply datasheet, version 2.0, 24 aug 2005 edit...mode controller with integrated 650v startup cell/depletion coolmos? product highlights ? best in ...
Description SWITCHING REGULATOR, 67 kHz SWITCHING FREQ-MAX, ZIP6
SWITCHING REGULATOR, 67 kHz SWITCHING FREQ-MAX, PDIP8
SWITCHING REGULATOR, 100 kHz SWITCHING FREQ-MAX, PDIP8
SWITCHING REGULATOR, 100 kHz SWITCHING FREQ-MAX, PDIP7
SWITCHING REGULATOR, 100 kHz SWITCHING FREQ-MAX, ZFM6

File Size 565.57K  /  31 Page

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    EB1500DFN-AJ FPD1500DFN1

http://
Filtronic Compound Semiconductors
Part No. EB1500DFN-AJ FPD1500DFN1
OCR Text ...: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 323.07K  /  10 Page

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    FPD1050SOT89 FPD1050SOT89E FPD1050SOT891

Filtronic Compound Semicond...
Filtronic Compound Semiconductors
Part No. FPD1050SOT89 FPD1050SOT89E FPD1050SOT891
OCR Text ... The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1050 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recesse...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 95.18K  /  3 Page

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    FPD2000AS-EB FPD2000AS FPD2000AS1

Filtronic Compound Semiconductors
Part No. FPD2000AS-EB FPD2000AS FPD2000AS1
OCR Text ...N: The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. TYPICAL AP...
Description 2W PACKAGED POWER PHEMT

File Size 320.19K  /  10 Page

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For depletion-mode Found Datasheets File :: 631    Search Time::2.078ms    
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