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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4304
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| OCR Text |
ds i d (at v gs =10v) 18a r ds(on) (at v gs =10v) < 6.0m w r ds(on) (at v gs = 4.5v) < 7.6m w symbol v ds the ao4304 combines ...308 400 pf c rss 90 154 215 pf r g 0.7 1.5 2.3 w q g (10v) 19 24 29 nc q g (4.5v) 8.5 11.1 14 nc q g... |
| Description |
30V N-Channel MOSFET
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| File Size |
335.04K /
6 Page |
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it Online |
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TriQuint Semiconductor,Inc.
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| Part No. |
TGF4230-SCC
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| OCR Text |
...bol parameter 1/ value notes v ds drain to source voltage 12 v v gs gate to source voltage range 0 to -5.0 volts p d power dissipation see ...308 50.73 0.060 6.43 0.457 -121.35 11.0 0.860 -166.58 1.244 48.23 0... |
| Description |
DC - 12 GHz Discrete HFET
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| File Size |
220.39K /
9 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MRF6VP3450HR5 MRF6VP3450HSR5 MRF6VP3450HSR6
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| OCR Text |
...akage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc drain - source breakdown voltage (i d = 50 ma, v gs = 0 vdc) v (br)dss 110 ...308 x 0.394 microstrip rf input v bias z12 z14 c1 z7 z13 c2 dut rf output z6 z16 z15 z17 r1 z19 ... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
680.43K /
18 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP11NK50Z STP11NK50ZFP
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| OCR Text |
...ermesh?power mosfet n typical r ds (on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very lo...308 2.4 16 ns nc a
stp11nk50z - stp11nk50zfp - stb11nk50z 4/12 safe operating area for to-220 / d2... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
471.96K /
12 Page |
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it Online |
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