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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MTP23P06V ON2569
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OCR Text |
... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 40 40 VGS = 10V 9V 7V 30 6V 8V I D , DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 4V 0 0 2 4 6 8 1... |
Description |
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
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File Size |
192.44K /
8 Page |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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Part No. |
MTP50N06EL MTP50N06
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OCR Text |
E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high ener...AMPS) TJ = 25C VGS = 10 V 8V 100 I D , DRAIN CURRENT (AMPS) 6V 5V 4.5 V 4V 40 3.5 V VDS 10 V 80 25C... |
Description |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
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File Size |
232.16K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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