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f-370-34 Datasheet PDF File

For f-370-34 Found Datasheets File :: 2339 Search Time::2.687ms
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				Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT10086BLC APT10086SLC
OCR Text	...ret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ch...
Description	POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVFR
OCR Text	...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	68.65K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVR
OCR Text	...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	65.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10086SVR
OCR Text	...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description	POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	68.97K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	CR5627
OCR Text	... 160 pF (typ. 100 pF) 10 nF 4.7 F; 160 V typ. 348 typ. 82 50 Equipment used in test-circuit (see Fig.6) EQUIPMENT Pulse generator Power supply FET probe Sampling oscilloscope TYPE DESCRIPTION Le Croy; Model 9210 with unit 9212 Philips...
Description	Triple video driver hybrid amplifier
File Size	39.30K / 8 Page	View it Online	Download Datasheet

				Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	D1028UK D1028
OCR Text	...D AMPLIFIER DESIGN E (4 pls) F I N M O J K * SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DR PIN 1 PIN 3 PI...370 380 390 400 410 420 430 440 450 460 470 480 490 500 VDS = 28V, IDQ = 1A per side S MA R 50 MH...
Description	Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽) METAL GATE RF SILICON FET
File Size	125.76K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU EA0520N IRFRU120A
OCR Text	...2A 4 O 4 O VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, RG=18 See Fig 13 VDS=80V,VGS=10V, ID=9.2A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continu...
Description	Advanced Power MOSFET Avalanche Rugged Technology N-CHANNEL POWER MOSFET 100V N-Channel A-FET / Substitute of IRFU110 100V N-Channel A-FET / Substitute of IRFR120 (IRFR120A / IRFU120A) Advanced Power MOSFET
File Size	254.49K / 7 Page	View it Online	Download Datasheet

				Linear Integrated Syste... Linear Systems LINEAR[Linear Integrated Systems]
Part No.	LS844 LS845 LS843 LS843-5
OCR Text	...n or Source 60V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 60V 50mA 1 S1 7 G2 Maximum Power Dissipation Device...370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 P-DIP 0.320 (8.13) 0.290 (7.37) ...
Description	ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
File Size	29.85K / 2 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STD2NA60
OCR Text	... on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 1.5 A VG S = 0 Min. 1 Typ. 2 380 57 17 500 75 23 Max. Unit S pF pF pF 2/10 STD2NA60 EL...370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.03...
Description	Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	170.85K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	...IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data She...370+.004 -.006 C L ] 2X 4.830.51 [.190.020] G 2X R1.63 [.064] 4X R1.52 [.060] 2X 12.70 [...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

For f-370-34 Found Datasheets File :: 2339 Search Time::2.687ms
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