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  hi-rel pnp bipolar transistor Datasheet PDF File

For hi-rel pnp bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    IRF250 2471

International Rectifier
Part No. IRF250 2471
Description 200V Single N-Channel hi-rel MOSFET in a TO-204AE package
From old datasheet system
HEXFET? transistor

File Size 144.56K  /  7 Page

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    STE07DE220 E07DE220

ST Microelectronics
STMicroelectronics
Part No. STE07DE220 E07DE220
Description Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module

File Size 94.73K  /  7 Page

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    JANTXV2N7224 JANTX2N7224 2N7224 IRFM150

International Rectifier, Corp.
IRF[International Rectifier]
Part No. JANTXV2N7224 JANTX2N7224 2N7224 IRFM150
Description HEXFET transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET? transistor
100V Single N-Channel hi-rel MOSFET in a TO-254AA package

File Size 308.82K  /  8 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-42036 AT-42036-TR1 AT-42036-BLK
Description AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon bipolar transistor
transistor | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X

File Size 69.63K  /  6 Page

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    ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
Part No. STE70IE120
Description Monolithic Emitter Switched bipolar transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched bipolar transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched bipolar transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module

File Size 127.05K  /  7 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. 12CLQ150
Description The 12CLQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. 2CLQ150中心抽头肖特基整流器已明确,旨在满足高新技术的严格要求- REL的环境
35A 150V hi-rel Schottky Common Cathode Diode in a SMD-1 package

File Size 74.00K  /  4 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE bipolar transistor(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    IRHM93160 IRHM9160

International Rectifier
Part No. IRHM93160 IRHM9160
Description -100V 300kRad hi-rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
HEXFET? transistor

File Size 123.08K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15M321
Description INSULATED GATE bipolar transistor SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE bipolar transistor SILICON N CHANNEL IGBT

File Size 257.03K  /  6 Page

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