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For ice Found Datasheets File :: 7356    Search Time::4.328ms    
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    HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D
OCR Text ... RATED POWER DISSIPATION (%) 35 ice, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 -75 100 80 60 40 20 -50 -25 0 +25 +50 +75 +100 +125 +150 +175 0 +25 +50 +75 +100 +125 (oC) +150 TJ , JUNCTION T...
Description CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 35.49K  /  6 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...aximum junction temperature. 2. ice = 20A, L = 400H, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS iceS TEST CONDITIONS IC = 250A, VGE ...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D
OCR Text ...50 +75 +100 +125 +150 +175 17.5 ice, COLLECTOR CURRENT (A) 15.0 12.5 10.0 7.5 5.0 2.5 0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIG...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB

File Size 36.64K  /  6 Page

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    HGTP10N40C1 HGTP10N40E1 HGTP10N50C1 HGTP10N50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1

INTERSIL[Intersil Corporation]
Part No. HGTP10N40C1 HGTP10N40E1 HGTP10N50C1 HGTP10N50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1
OCR Text ...50 +75 +100 +125 +150 +175 17.5 ice, COLLECTOR CURRENT (A) 15.0 12.5 10.0 7.5 5.0 2.5 0.0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TD , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) F...
Description 10A 12A 400V and 500V N-Channel IGBTs
10A, 12A, 400V and 500V N-Channel IGBTs
10A/ 12A/ 400V and 500V N-Channel IGBTs

File Size 38.49K  /  7 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ... Typical Performance Curves 12 ice, COLLECTOR-EMITTER CURRENT (A) ice, COLLECTOR-EMITTER CURRENT (A) 10 PULSE TEST, VCE = 10V PULSE DURATION = 250s DUTY CYCLE < 2% TC = -55oC 10 VGE = 15V VGE = 10V VGE = 6.0V PULSE DURATION = 250s DUTY CYC...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text ...F IGBT and Diode at TJ = 125oC, ice = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 12A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 60 TYP 2.0 1....
Description    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text ... IGBT and Diode at TJ = 25oC ice = 12A VCE = 390V VGE =15V RG = 10 L = 500H Test Circuit (Figure 20) (c)2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2 HGTP12N60A4, HGTG12N60A4, HGT1S12...
Description 600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...96 IGBT and Diode at TJ = 150oC ice = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 19) TYP 1.6 1.7 4.9 7.3 51 68 26 23 150 62 304 250 22 23 280 112 500 660 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 295 175 525 800 UN...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ... IGBT and Diode at TJ = 25oC ice = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figure 17) 2 HGTP12N60B3, HGT1S12N60B3S Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Tur...
Description From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ...10, VCE = 0.5 BVCES TJ = 150oC, ice = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H VGE = 15V VGE = 20V - 7.6 48 62 28 20 270 210 380 900 1.7 55 71 400 275 2.1 V nC nC ns ns ns ns J J V Current Turn-On Delay Time C...
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 151.95K  /  8 Page

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