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id-19a Datasheet PDF File

For id-19a Found Datasheets File :: 1923 Search Time::1.625ms
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				ST Microelectronics
Part No.	STB11NK40Z STP11NK40Z STP11NK40ZFP
OCR Text	...(on) < 0.55 < 0.55 < 0.55 ID 9A 9A 9A Pw 110 W 30 W 110 W 3 1 2 TYPICAL RDS(on) = 0.49 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATI...
Description	N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
File Size	574.94K / 12 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	K1088-M
OCR Text	...e Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 9 36 9 20 35 150 -55 ~ +150 Unit V A A A V W C C > Equiva...1,0 Typ. 1,5 10 0,2 10 0,26 0,20 10 900 150 40 10 40 150 30 1,1 100 Max. 2,5 500 1,0 100 0,40 ...
Description	Search --To 2SK1088-M
File Size	210.86K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	IRF630M
OCR Text	...V RDS(on) < 0.40 < 0.40 ID 9A 9A TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed usi...
Description	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET
File Size	434.94K / 9 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEFF630B CEPF630B CEBF630B CEIF630B
OCR Text	...0V 200V RDS(ON) 0.4 0.4 0.4 0.4 ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D PRELIMINARY Super high dense cell design for extremely low RDS(ON...1.7 62.5 Limit 3.6 65 Units C/W C/W 2004.November 4 - 194 http://www.cetsemi.com CEPF630B/...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	83.24K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD10NM65N
OCR Text	....48 < 0.48 < 0.48 < 0.48 ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed 3 1 3 1 2 100% avalanche tested Low input...
Description	N-channel Power MOSFET
File Size	524.14K / 17 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	LL024N
OCR Text	...= 55V RDS(on) = 0.065 G S ID = 3.1A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...1.0W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings...
Description	Search --To IRLL024N
File Size	148.40K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STL9NK30Z
OCR Text	...VDSS 300 V RDS(on) < 0.4 ID (1) 9A Pw (1) 75 W TYPICAL RDS(on) = 0.36 EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING R...
Description	N-CHANNEL 300V - 0.36 OHM - 9A POWERFLAT ZENER-PROTECTED SUPERMESH POWERMOSFET N-CHANNEL Power MOSFET N-CHANNEL 300V - 0.36ohm - 9A PowerFLAT Zener-Protected SuperMESHPower MOSFET N-CHANNEL 300V - 0.36ohm - 9A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
File Size	224.41K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	AP9575H AP9575J
OCR Text	...E POWER MOSFET BVDSS RDS(ON) ID -60V 90m -15A Description The TO-252 package is universally preferred for all commercialindustrial...1 Rating -60 25 -15 -9.5 45 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ Total Powe...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	102.61K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	K3679-01MR
OCR Text	...y Graph 2 Tch <150C = 3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C 4 VDS< 900V 5 VGS=-30V 6 t=60sec, f=60Hz = = = = Item Drain-source voltage Symbol VDS VDSX 5 ID ID(puls] VGS IAR 2 EAS 1 dVDS/dt 4 dV/dt 3 PD Ta=25C Tc=25C ...
Description	Search --To 2SK3679-01MR
File Size	134.96K / 4 Page	View it Online	Download Datasheet

				Niko
Part No.	P2003EVG
OCR Text	...UMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL VDS VGS TC = 25 C TC = 70 C ID IDM...
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	322.21K / 5 Page	View it Online	Download Datasheet

For id-19a Found Datasheets File :: 1923 Search Time::1.625ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |