| |
|
 |
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8011JLL APT8011
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 2.77mH, R = 25W, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
56.67K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8011 APT8011JFLL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 2.77mH, R = 25W, Peak I = 51A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
58.29K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technology
|
| Part No. |
APT8014JFLL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.63mH, R = 25W, Peak I = 42A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
58.42K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technology
|
| Part No. |
APT8014JLL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.63mH, R = 25W, Peak I = 42A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
56.73K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8014L2FLL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 2.37mH, R = 25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
52.75K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8014L2LL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 2.37mH, R = 25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
51.58K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
http://
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8015JVFR APT8015
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.72mH, R = 25, Peak I = 44A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
|
| File Size |
77.92K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| Part No. |
APT8015 APT8015JVR
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.72mH, R = 25, Peak I = 44A j G L
APT Reserves the right to change, without notice, the specificatio...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL... |
| Description |
POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
| File Size |
75.34K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8018 APT8018L2VR APT8018JN
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 3.46mH, R = 25W, Peak I = 43A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
58.92K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT8020B2FLL APT8020LFLL
|
| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 4.16mH, R = 25W, Peak I = 38A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
58.72K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
