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  medium power double igbt drive Datasheet PDF File

For medium power double igbt drive Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    HMC296MS810

Hittite Microwave Corporation
Part No. HMC296MS810
Description LOW LO drive double-BALANCED FET MIXER, 1.1 - 1.7 GHz

File Size 178.36K  /  6 Page

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    HMC296MS8

美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
Part No. HMC296MS8
Description LOW LO drive double-BALANCED FET MIXER/ 1.1 - 1.7 GHz
LOW LO drive double-BALANCED FET MIXER, 1.1 - 1.7 GHz

File Size 180.36K  /  6 Page

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    TLP350

Toshiba Semiconductor
Part No. TLP350
Description Inverter for Air Conditioner, igbt/power MOS FET Gate drive, Industrial Inverter
Photocouplers - Photo-IC Output

File Size 140.34K  /  6 Page

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    2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R

Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R
Description medium power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
medium power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > medium power Bipolar Transistors(0.5W-1.0W)

File Size 121.30K  /  4 Page

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    International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
Part No. 54488
Description 600 watt, tungsten halogen, medium to high voltage, double-ended

File Size 63.88K  /  2 Page

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    International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
Part No. 53997
Description 1,000 watt, tungsten halogen, medium to high voltage, double-ended

File Size 64.20K  /  2 Page

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    SEMIKRON[Semikron International]
Part No. SKHI26W SKHI26F
Description double igbt driver

File Size 1,082.74K  /  6 Page

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    SKHI26W05

Semikron International
Part No. SKHI26W05
Description double igbt driver

File Size 78.97K  /  1 Page

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    Mitsubishi Electric Corporation
Part No. CR8PM-12 CR8PM-8
Description Integrated Gate Bipolar Transistor (igbt) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) medium power USE INSULATED TYPE, GLASS PASSIVATION TYPE

File Size 71.52K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. CR6PM-12 CR6PM-8
Description Integrated Gate Bipolar Transistor (igbt) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) medium power USE INSULATED TYPE, GLASS PASSIVATION TYPE

File Size 76.68K  /  5 Page

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