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Advanced Photonix
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Part No. |
PDU-G106B-SM
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OCR Text |
... ? visible & nir blind ? photovoltaic operation ? high shunt resistance symbol parameter min max units v br reverse voltage 5 v t stg storage temperature -40 +90 c... |
Description |
UV Enhanced GaN Detectors
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File Size |
65.26K /
1 Page |
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Hamamatsu Photonics
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Part No. |
S9295
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OCR Text |
... active area: 10 10 mm l uv to nir si photodiode optimized for precision photometry l compact hermetic package with sapphire window l high precision fet input operational amplifier l high gain: rf=10 g ? l low noise and nep l high cooling... |
Description |
Large area photodiode integrated with op amp and TE-cooler
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File Size |
115.21K /
4 Page |
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Hamamatsu Photonics K.K.
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Part No. |
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q S4111-35Q
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OCR Text |
...t si photodiode array for uv to nir features l large active area l low cross-talk l wide spectral response range l high uv sensitivity l wide linearity l s4111 series: enhanced infrared sensitivity, low dark current l s4114 series: low term... |
Description |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to nir 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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File Size |
126.96K /
4 Page |
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Electronic Theatre Controls, Inc.
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Part No. |
AD500-9
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OCR Text |
nir special characteristics : quantum efficiency > 80 % at 760 - 910 nm high speed, low noise 500 m diameter active area low slope multiplication curve ... |
Description |
Avalanche Photodiode nir
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File Size |
211.74K /
2 Page |
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it Online |
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Price and Availability
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