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C101M UH1PC 2SC4693 BZX84C3 MB86041A HM65256B 02112 ETL9322
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  nir Datasheet PDF File

For nir Found Datasheets File :: 176    Search Time::4.703ms    
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    Advanced Photonix
Part No. PDU-G106B-SM
OCR Text ... ? visible & nir blind ? photovoltaic operation ? high shunt resistance symbol parameter min max units v br reverse voltage 5 v t stg storage temperature -40 +90 c...
Description UV Enhanced GaN Detectors

File Size 65.26K  /  1 Page

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    Hamamatsu Photonics
Part No. S9295
OCR Text ... active area: 10 10 mm l uv to nir si photodiode optimized for precision photometry l compact hermetic package with sapphire window l high precision fet input operational amplifier l high gain: rf=10 g ? l low noise and nep l high cooling...
Description Large area photodiode integrated with op amp and TE-cooler

File Size 115.21K  /  4 Page

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    CYIL1SM1300AA09

Cypress Semiconductor
Part No. CYIL1SM1300AA09
OCR Text ...1 w/m2). 21.43 v/lx.s visible + nir (70 lx = 1 w/m2). fill factor 50% 100%-metal and polycide coverage. peak qe * ff peak sr * ff 15% 0.08 a/w see spectral response curve. mtf x: 67% y: 66% at nyquist. temporal noise 45e- dark environmen...
Description LUPA-1300 1.3 MPxl High Speed CMOS Image Sensor

File Size 1,196.24K  /  29 Page

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    Hamamatsu Photonics K.K.
Part No. S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q S4111-35Q
OCR Text ...t si photodiode array for uv to nir features l large active area l low cross-talk l wide spectral response range l high uv sensitivity l wide linearity l s4111 series: enhanced infrared sensitivity, low dark current l s4114 series: low term...
Description MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to nir 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵

File Size 126.96K  /  4 Page

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    SSO-AD-230-TO52-S1

Roithner LaserTechnik GmbH
Part No. SSO-AD-230-TO52-S1
OCR Text ...0nA at M=1 and irradiation by a nir-LED (880 nm, 80 nm bandwith). Rise of the photo current up to 1 A, (M=100) by internal multiplication due to an increasing bias voltage. SSO - AD - serie Spectral Responsivity at M=1 0,600 0,500 0,400...
Description Avalanche Photodiode

File Size 128.18K  /  2 Page

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    SSO-AD-1900-TO5I SSO-AD-2500-TO5I

Roithner LaserTechnik GmbH
Part No. SSO-AD-1900-TO5I SSO-AD-2500-TO5I
OCR Text ...0nA at M=1 and irradiation by a nir-LED (880 nm, 80 nm bandwith). Rise of the photo current up to 1 A, (M=100) by internal multiplication due to an increasing bias voltage. SSO - AD - serie Spectral Responsivity at M=1 0,600 0,500 0,400...
Description Avalanche Photodiode

File Size 141.92K  /  2 Page

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    SD551-23-41-221

Advanced Photonix, Inc.
Part No. SD551-23-41-221
OCR Text ...TION The SD 551-23-41-221 is a nir enhanced silicon P-type detector used for applications requiring fast response with low capacitance and high responsivity packaged in a hermetic TO-8 metal package. APPLICATIONS * Laser guided munitio...
Description High Voltage P-Type Quad Silicon Detector

File Size 100.71K  /  1 Page

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    Electronic Theatre Controls, Inc.
Part No. AD500-9
OCR Text nir special characteristics : quantum efficiency > 80 % at 760 - 910 nm high speed, low noise 500 m diameter active area low slope multiplication curve ...
Description Avalanche Photodiode nir

File Size 211.74K  /  2 Page

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