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F0515 V805ME17 05110 00CWR 2S0305S PQ20VZ AZ941 300HS
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    HMC542ALP4 HMC542ALP4E

Hittite Microwave Corporation
Part No. HMC542ALP4 HMC542ALP4E
OCR Text ...equency (ghz) min. t yp. max. u nits insertion loss dc - 1.5 ghz 1.5 - 3.0 ghz 3.0 - 4.0 ghz 1.2 1.5 1.8 1.5 1.8 2.3 db db db attenuation r ange dc - 4.0 ghz 31.5 db r eturn loss ( r f1 & r f2, all atten. s tates) dc - 4.0 ghz 17 db atte...
Description 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 4 GHz

File Size 524.37K  /  8 Page

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    HMC542LP410

Hittite Microwave Corporation
Part No. HMC542LP410
OCR Text ...equency (ghz) min. t yp. max. u nits insertion loss dc - 1.5 ghz 1.5 - 3.0 ghz 1.2 1.5 1.5 1.8 db db attenuation r ange dc - 3 ghz 31.5 db r eturn loss ( r f1 & r f2, all atten. s tates) dc - 3 ghz 17 db attenuation accuracy: ( r eferenc...
Description 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 3 GHz

File Size 407.43K  /  8 Page

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    ADG529AKRW-REEL7 ADG528AKP-REEL ADG529ATQ ADG529AKP ADG529AKN ADG529ABQ ADG529ABCHIPS ADG529ATCHIPS

Analog Devices
Part No. ADG529AKRW-REEL7 ADG528AKP-REEL ADG529ATQ ADG529AKP ADG529AKN ADG529ABQ ADG529ABCHIPS ADG529ATCHIPS
OCR Text ...c +25 c +85 c +25 c +125 cu nits comments power supply i dd 0.6 0.6 0.6 ma typ v in = v inl or v inh 1.5 1.5 1.5 ma max i ss 20 20 20 a typ v in = v inl or v inh 0.2 0.2 0.2 ma max power dissipation 10 10 10 mw typ 2.8 2.8 2.8 mw m...
Description CMOS Latched 4-/8-Channel Analog Multiplexers

File Size 149.38K  /  12 Page

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    IRFBC40A IRFBC40APBF

International Rectifier
Part No. IRFBC40A IRFBC40APBF
OCR Text ...d g parameter min. typ. max. u nits conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forwar...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 102.50K  /  8 Page

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    HMC496LP3E HMC496LP311

Hittite Microwave Corporation
Part No. HMC496LP3E HMC496LP311
OCR Text ...t yp. m ax. m in. t yp. m ax. u nits frequency r ange, r f 4.9 - 5.4 5.4 - 5.9 5.9 - 6.4 ghz o utput power -1 +2 -1 +2 -2 +1 dbm o utput p1db 3 4 4 dbm o utput i p3 15 18 14 17 14 17 dbm o utput noise floor -157 -156 -155 dbm/hz c arrier...
Description SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz

File Size 422.21K  /  10 Page

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    IRL3103D1S

International Rectifier
Part No. IRL3103D1S
OCR Text ...d1s parameter min. typ. max. u nits conditions i f (av) ( schottky) mosfet symbol showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction and schottky diode. v sd1 diode forward voltage CCC C...
Description 30V FETKY - MOSFET and Schottky Diode in a D2-Pak package

File Size 130.55K  /  7 Page

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    HMC988LP3E

Hittite Microwave Corporation
Part No. HMC988LP3E
OCR Text ...eter conditions min t yp. max u nits i nput frequency r ange dc 4 ghz o utput frequency r ange dc 4 ghz divide r atios 1/2/4/8/16/32 maximum fine delay adjust frequency dc 1 ghz vdd with on-chip regulator +3.7 +4.5 +5.5 v vdd bypass on-c...
Description PROGRAMMABLE CLOCK DIVIDER AND DELAY

File Size 970.18K  /  22 Page

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    International Rectifier, Corp.
Part No. IRL520NL IRL520NSTRR
OCR Text ...ns/l parameter min. typ. max. u nits conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.11 CCC v/c reference to 25c, i d = 1ma...
Description 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V的单N沟道HEXFET功率MOSFET的采用TO - 262封装

File Size 186.56K  /  10 Page

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    IRG4BC20SD IRG4BC20SDPBF

International Rectifier
Part No. IRG4BC20SD IRG4BC20SDPBF
OCR Text ... parameter min. typ. max. u nits conditions q g total gate charge (turn-on) 27 40 i c = 10a qge gate - emitter charge (turn-on) 4.3 6.5 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) 10 15 v ge = 15v t d(...
Description 600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package

File Size 297.87K  /  10 Page

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    IRF3706 IRF3706L IRF3706S IRF3706STRL IRF3706STRR

International Rectifier
Part No. IRF3706 IRF3706L IRF3706S IRF3706STRL IRF3706STRR
OCR Text ...mbol parameter min. typ. max. u nits conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.88 1.3 v t ...
Description 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.68K  /  11 Page

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