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  p-mos Datasheet PDF File

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES ...
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES ...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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    Q67006-A9320 BTS780GP

Infineon Technologies AG
Part No. Q67006-A9320 BTS780GP
OCR Text ...C: High-side switch: typ. 34 m, P-TO263-15-1 Low-side switch: typ. 15 m High peak current capability of typ. 44 A @ 25 C Low quiescent curre...MOS compatible inputs Internal clamp diodes Isolated sources for external current sensing Over- and ...
Description TrilithIC

File Size 243.39K  /  18 Page

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    ST Microelectronics
Part No. STLC3055N
OCR Text ... external Power MOS transistor (P-channel). RSENSE Voltage input for current sensing. RSENSE should be connected close to this pin and VPOS pin. The PCB layout should minimize the extra resistance introduced by the copper tracks. VPOS CV...
Description WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT

File Size 606.50K  /  24 Page

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    BF990A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BF990A
OCR Text ...te 2-source breakdown voltage V(P)G1-S V(P)G2-S gate 1-source cut-off voltage gate 2-source cut-off voltage DYNAMIC CHARACTERISTICS Measu...MOS-FET PACKAGE OUTLINE BF990A handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max...
Description N-channel dual-gate MOS-FET

File Size 70.84K  /  8 Page

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    NP55N055SDG NP55N055SDG-15

Renesas Electronics Corporation
Part No. NP55N055SDG NP55N055SDG-15
OCR Text ...the mark shows ma j or revised p oints. description the np55n055sdg is n-channel mos field effect transistor designed for high current switching applications. features ? channel temperature 175 degree rating ? super low on-sta...
Description 55 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
SWITCHING N-CHANNEL POWER MOS FET

File Size 277.10K  /  9 Page

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    RD100HHF1

Mitsubishi Electric Semiconductor
Part No. RD100HHF1
OCR Text ...rallel L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D10mm,...MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET...
Description MOS FET type transistor specifically designed for HF High power amplifiers applications.

File Size 176.06K  /  7 Page

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    Mitsubishi Electric
Part No. RD07MVS1
OCR Text ....4 6 m m O .D C 1 ,C 2 :1 0 0 0 p F ,0 .0 2 2 uF in p aralle l No te :B o ard m ate rial- T e flo n sub strate Mic ro s trip line wid th=...MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET ...
Description Silicon MOSFET Power Transistor

File Size 241.52K  /  8 Page

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