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  rambus Datasheet PDF File

For rambus Found Datasheets File :: 300    Search Time::1.687ms    
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    MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF0 MR16R1624AF0 MR16R1628AF0 MR16R1622AF0 MR16R1624AF0-CK8 MR16R1624AF0-CM8 MR18R1628AF0-CK8 MR18R1628AF0-CM8 MR18R1628AF1-CN9 MR18R1628AF1-CT9 MR18R1622AF0-CK8 MR18R1622AF0-CM8 MR18R162GAF0-CK8 MR18R162GAF0-CM8 MR18R162GAF0-CN9 MR18R162GAF0-CT9 MR18R1624AF0-CK8 MR18R1624AF0-CM8 MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR16R1622AF0-CK8 MR16R1622AF0-CM8 MR16R162GAF0-CK8 MR16R162GAF0-CM8 MR16R1628AF0-CK8 MR16R1628AF0-CM8
OCR Text rambus 256/288Mbit RIMM Module Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning * Modify TPD Value of AC electrical specifications * Modify the Values of AC electr...
Description 64M X 16 rambus MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V

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    MR16R082GBN1 MR16R082CGBN1-CK8 MR16R0824BN1 MR16R0824BN1-CG6 MR16R0824BN1-CK7 MR16R0824BN1-CK8 MR16R0826BN1 MR16R0826BN1

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. MR16R082GBN1 MR16R082CGBN1-CK8 MR16R0824BN1 MR16R0824BN1-CG6 MR16R0824BN1-CK7 MR16R0824BN1-CK8 MR16R0826BN1 MR16R0826BN1-CG6 MR16R0826BN1-CK7 MR16R0826BN1-CK8 MR16R0828BN1 MR16R0828BN1-CG6 MR16R0828BN1-CK7 MR16R0828BN1-CK8 MR16R082CGBN1-CG6 MR16R082CGBN1-CK7 MR16R082CBN1
OCR Text rambus MODULE RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. 00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version. -1- Version 1....
Description (MR16R0824(6/8/C/G)BN1) rambus MODULE
rambus MODULE rambus的模

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SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R441869B-NCK7 K4R441869B-NCK8
OCR Text ...0) - preliminary * based on the rambus 1.11ver. 128/144mbit(32s banks) rdram datasheet. direct rdram ? page 1 k4r271669b/k4r441869b version 1.11 oct. 2000 overview the rambus direct rdram? is a general purpose high- performance memory...
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM

File Size 309.32K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-FCM8
OCR Text ...m words by 18 bits. the use of rambus signaling level (rsl) technology permits up to 1200 mhz transfer rates while using conventional system and board design technologies. rdram devices are capable of sustained data transfers up to 0...
Description 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

File Size 314.62K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R571669D
OCR Text ... by 16 or 18 bits. the use of rambus signaling le vel (rsl) technology permits up to 1066 mhz transfer rates while using conven- tional system and board de sign technologies. rdram devices are capable of sustaine d data transfers up to...
Description 256/288Mbit RDRAM(D-die)

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