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  samsungs Datasheet PDF File

For samsungs Found Datasheets File :: 418    Search Time::1.968ms    
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    DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G
OCR Text ...6U6G families are fabricated by samsungs advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retent...
Description    256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 178.87K  /  9 Page

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    K1S321611C K1S321611C-FI70 K1S321611C-I

Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text ...The K1S321611C is fabricated by samsungs advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also suppo...
Description 2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器

File Size 178.12K  /  10 Page

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    K1S32161CC K1S32161CC-FI70 K1S32161CC-I

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text ...The K1S32161CC is fabricated by samsungs advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design....
Description 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 184.44K  /  10 Page

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    K1S3216B1C K1S3216B1C-I

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216B1C K1S3216B1C-I
OCR Text ...The K1S3216B1C is fabricated by samsungs advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also suppo...
Description 2Mx16 bit Uni-Transistor Random Access Memory

File Size 179.11K  /  10 Page

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    K4F640412D K4F660412D

SAMSUNG[Samsung semiconductor]
Part No. K4F640412D K4F660412D
OCR Text ...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4F660412D-JC/L(3.3V, 8K Ref., SOJ) - K4F640412D-JC/L(3.3V, 4K Ref.,...
Description 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 366.75K  /  20 Page

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    K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
OCR Text ...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4F660811B-JC(5.0V, 8K Ref.) - K4F640811B-JC(5.0V, 4K Ref.) - K4F660...
Description 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns

File Size 366.42K  /  20 Page

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    K4F640812D K4F660812D K4F640812D-JCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640812D K4F660812D K4F640812D-JCL
OCR Text ...DRAM family is fabricated using samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES * Part Identification - K4F660812D-JC/L(3.3V, 8K Ref., SOJ) - K4F640812D-JC/L(3.3V, 4K Ref.,...
Description 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.

File Size 367.41K  /  20 Page

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    SAMSUNG
Part No. KM44S16030 KM44S16030CT
OCR Text ...ords by 4 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description 4M x 4Bit x 4 Banks Synchronous DRAM

File Size 81.33K  /  8 Page

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    KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA KM48S16030AT-G/F10 KM48S16030AT-G/FA KM48S16030AT-FL KM48S16030AT-G/F8

Electronic Theatre Controls, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA KM48S16030AT-G/F10 KM48S16030AT-G/FA KM48S16030AT-FL KM48S16030AT-G/F8 KM48S16030AT-G/FH KM48S16030AT-G/FL
OCR Text ...ords by 8 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description    128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

File Size 135.59K  /  11 Page

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    KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 KM48S16030BT-G/F10 KM48S16030BT-G/F8 KM48S16030BT-G/FA KM48S16030BT-G/F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Electronic Theatre Controls, Inc.
Part No. KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 KM48S16030BT-G/F10 KM48S16030BT-G/F8 KM48S16030BT-G/FA KM48S16030BT-G/FH KM48S16030BT-G/FL KM48S16030BT-FL
OCR Text ...ords by 8 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

File Size 132.26K  /  11 Page

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For samsungs Found Datasheets File :: 418    Search Time::1.968ms    
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