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				FAIRCHILD
Part No.	FDP8896
OCR Text	...e current limitation is 80A. 2: starting TJ = 25C, L = 36H, IAS = 64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s. (c)2004 Fairchild Semiconductor Corporation FDP8896 Rev. A FDP8896 Typical Characteristics TC = 25C unless other...
Description	30V N-Channel PowerTrench? MOSFET
File Size	527.28K / 10 Page	View it Online	Download Datasheet

				IDT Integrated Device Technology
Part No.	IDTCV119E IDTCV119EPV CV119
OCR Text	...knowledge Register offset byte (starting byte) Acknowledge Byte count N (0 is not a valid byte count)(1) Acknowledge First data byte Acknowledge Second data byte Acknowledge : Nth data byte Stop NOTE: 1. Bit [21:27] = byte count. Bit 20 = ...
Description	CLOCK GENERATOR FOR DESKTOP PC PLATFORMS
File Size	103.08K / 21 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405ZL-7P IRF1405ZS-7P
OCR Text	...ee fig. 11). Limited by TJmax, starting TJ = 25C, L=0.064mH, RG = 25, IAS = 88A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging t...
Description	AUTOMOTIVE MOSFET
File Size	685.48K / 11 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	WEDPN8M72V-100B2M WEDPN8M72V-133B2C WEDPN8M72V-133B2I WEDPN8M72V-133B2M WEDPN8M72V-125B2C WEDPN8M72V-125B2I WEDPN8M72V-125B2M WEDPN8M72V-XB2X WEDPN8M72V-100B2C WEDPN8M72V-100B2I
OCR Text	... command are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE fun...
Description	8Mx72 Synchronous DRAM
File Size	297.59K / 13 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	WEDPN8M64V-100B2C WEDPN8M64V-133B2C WEDPN8M64V-133B2I WEDPN8M64V-133B2M WEDPN8M64V-125B2C WEDPN8M64V-125B2I WEDPN8M64V-125B2M WEDPN8M64V-100B2I WEDPN8M64V-100B2M WEDPN8M64V-XB2X
OCR Text	... command are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE fun...
Description	8Mx64 Synchronous DRAM
File Size	338.03K / 15 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7484PBF
OCR Text	...unted on 1 in square Cu board. starting TJ = 25C, L = 2.3mH, RG = 25, IAS = 14A. (See Figure 12). ISD 14A, di/dt 140A/s, VDD V(BR)DSS, Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. TJ 1...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	169.29K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7484Q
OCR Text	...unted on 1 in square Cu board. starting TJ = 25C, L = 2.3mH, RG = 25, IAS = 14A. (See Figure 12). ISD 14A, di/dt 140A/s, VDD V(BR)DSS, Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. TJ 1...
Description	AUTOMOTIVE MOSFET
File Size	246.69K / 10 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	W3E232M16S-266STIG W3E232M16S-250STCG W3E232M16S-250STI W3E232M16S-200STI W3E232M16S-400STIG W3E232M16S-200STC W3E232M16S-200STCG W3E232M16S-200STIG W3E232M16S-250STC W3E232M16S-250STIG W3E232M16S-266STC W3E232M16S-266STCG W3E232M16S-266STI W3E232M16S-400STC W3E232M16S-400STCG W3E232M16S-400STI
OCR Text	...used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable READ or WRITE burst lengths of 2, 4, or 8 locations. An auto precharge function may be enabled to provide a selftimed row...
Description	2x32Mx16bit DDR SDRAM
File Size	651.46K / 22 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	W364M72V-ESSB W364M72V-125SB W364M72V-XSBX W364M72V-100SB W364M72V-100SBC W364M72V-100SBI W364M72V-100SBM W364M72V-125SBC W364M72V-125SBI W364M72V-125SBM W364M72V-ESSBC W364M72V-ESSBI W364M72V-ESSBM
OCR Text	... command are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE fun...
Description	64Mx72 Synchronous DRAM
File Size	372.44K / 16 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text	...ite accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The AC...
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	466.90K / 55 Page	View it Online	Download Datasheet

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