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				Panasonic Semiconductor
Part No.	D2222
OCR Text	... v ceo v ebo i cp i c p c t j t stg ratings 160 160 5 15 8 150 3.5 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forw...
Description	Search --To 2SD2222
File Size	87.32K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSE13003T
OCR Text	... junction temperature 150 c t stg storage temperature - 65 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v i ebo emitter cut-off current v eb = 9...
Description	NPN Silicon Transistor
File Size	45.23K / 4 Page	View it Online	Download Datasheet

				Korea Electronics (KEC)
Part No.	MJE13003
OCR Text	...150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =2v, i c =0.5a 8 - 40 h fe (2) v ce =2v, i c =1...
Description	Switching Transistor
File Size	392.75K / 2 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	2SA1451A-YF 2SA1451A06
OCR Text	... a) ? high-speed switching: t stg = 1.0 s (typ.) ? complementary to 2sc3709a absolute maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 60 v collector-emitter voltage v ceo ? 5...
Description	High-Speed, High-Current Switching Applications
File Size	143.81K / 5 Page	View it Online	Download Datasheet

				Panasonic Battery Group
Part No.	2SC3938GQL
OCR Text	...time t off 17 ns storage time t stg 10 ns electrical characteristics t a = 25 c 3 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 40 v collector-emitter voltage (e-b short) v ces 40 v emitter-base volta...
Description	Silicon NPN epitaxial planar type
File Size	278.24K / 4 Page	View it Online	Download Datasheet

				Newhaven Display International, Inc.
Part No.	NHD-4.3-480272ZF-ATXI-1
OCR Text	...--- +60 storage temperature t stg --- -30 --- +70 12. electrical characteristics standard value item symbol conditions min typ max unit power supply voltage v dd v ss ta= +25 - 3.3 - v input voltage h level v ih 0.8v dd ...
Description
File Size	750.86K / 23 Page	View it Online	Download Datasheet

				Newhaven Display International, Inc.
Part No.	NHD-4.3-480272ZF-ATXI-T-1
OCR Text	...--- +60 storage temperature t stg --- -30 --- +70 12. electrical characteristics standard value item symbol conditions min typ max unit power supply voltage v dd v ss ta= +25 - 3.3 - v input voltage h level v ih 0.8v dd ...
Description
File Size	629.79K / 23 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BUJ105AD
OCR Text	... = 25 c; see figure 1 -80w t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. normalized total power dissipation as a function of mounting base temperature t mb ( c) 0 160 120 40 80 001aab993 40 80 120 p de...
Description	Silicon diffused power transistor
File Size	102.37K / 12 Page	View it Online	Download Datasheet

				Cree Research
Part No.	PFM18030
OCR Text	... sense fet periphery ratio a) stg 1 track b) stg 2 track 3.0 1.7 % % ratio of sense fet current, relative to rf fet current. ratios are: stg 1: 33:1; stg 2: 58:1 gates of sense & rf fets are dc connected. m easure...
Description	2-Stage Power Module Enhancement-Mode Lateral MOSFETs
File Size	334.11K / 13 Page	View it Online	Download Datasheet

For stg Found Datasheets File :: 74999 Search Time::3.437ms
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