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For time-base Found Datasheets File :: 63944    Search Time::2.109ms    
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    2SB951 2SB951A 2SD1277A 2SD1277

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB951 2SB951A 2SD1277A 2SD1277
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P Rank hFE1 2000 to 5000 4000 to 10000 ...Base to emitter saturation voltage VBE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) IC...
Description Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

File Size 69.42K  /  3 Page

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    2SB952 2SB952A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB952 2SB952A
OCR Text ...ctor output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 3.0-0.2...base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Pow...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 57.02K  /  3 Page

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    2SB953 2SB953A 2SD1444A 2SD1444

PANASONIC[Panasonic Semiconductor]
Part No. 2SB953 2SB953A 2SD1444A 2SD1444
OCR Text ...ctor output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Note: Ordering can be m...Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -3 1000 ...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 54.50K  /  3 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Po...Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) ...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SB955 2SB955K

HITACHI[Hitachi Semiconductor]
Part No. 2SB955 2SB955K
OCR Text ...E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB...Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current -10 -3 -1.0...
Description Silicon PNP Triple Diffused

File Size 34.71K  /  6 Page

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    2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662

ROHM[Rohm]
Part No. 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662
OCR Text ...tput capacitance Collector-base time constant Noise factor fT Cob rbb'Cc NF Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. 20 11 3 - - - 56 82 1.4 - - - Typ. - - - - - - - - 3.2 0.8 4 3.5 Max. - - - 0.5 0.5 0.5 180 180 - 1.5 12 - 2SC56...
Description High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)

File Size 61.54K  /  2 Page

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    2SC5002

SANKEN[Sanken electric]
Part No. 2SC5002
OCR Text ...5 7 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 100s Reverse Bias Safe Operating Area 20 80 P c - T a Derating 10 Co lle ...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)

File Size 23.63K  /  1 Page

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    2SC5003

SANKEN[Sanken electric]
Part No. 2SC5003
OCR Text ...5 7 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 100s Reverse Bias Safe Operating Area 20 80 P c - T a Derating 10 Co lle ...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

File Size 24.73K  /  1 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...ge Transition frequency Turn-on time Storage time Fill time (Ta=25C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditi...Base to emitter saturation voltage VBE(sat) (V) 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Co...Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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