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NXP Semiconductors N.V.
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| Part No. |
BUK9506-75B BUK9506-75B-15
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a [1] -75a i dm peak drain current t mb = 25 c; pulsed; t p 10 s; see figure 3 - 612 a p tot tota... |
| Description |
N-channel trenchmos logic level FET N沟道trenchmos逻辑电平场效应管
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| File Size |
190.57K /
13 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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| Part No. |
PHN210T
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum ...a p tot total power dissipation t sp =25c [2] -2w t stg storage temperature -65 150 c t j junction t... |
| Description |
Dual N-channel trenchmos intermediate level FET 3.4 a, 30 V, 0.1 ohm, 2 CHaNNEL, N-CHaNNEL, Si, POWER, MOSFET, MS-012aa
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| File Size |
128.68K /
13 Page |
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it Online |
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Philips
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| Part No. |
PHX27NQ11T
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| OCR Text |
trenchmos? standard level fet rev. 01 14 may 2004 product data 1. product pro?le 1.1 description n-channel enhancement mode ?eld-effect transistor in a fully isolated encapsulated plastic package using trenchmos? technology. 1.2 features 1... |
| Description |
N-channel trenchmos (tm) standard level FET
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| File Size |
86.50K /
12 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK9E04-30B
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a [1] -75a i dm peak drain current t mb = 25 c; pulsed; t p 10 s; see figure 3 - 732 a p tot total... |
| Description |
N-channel trenchmos logic level FET N沟道trenchmos逻辑电平场效应管
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| File Size |
169.54K /
13 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK652R1-30C
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| OCR Text |
... plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for...a t mb =100c; v gs = 10 v; see figure 1 [3] - 120 a i dm peak drain current t mb = 25 c; pulsed; t ... |
| Description |
N-channel trenchmos intermediate level FET 100 a, 30 V, 0.0021 ohm, N-CHaNNEL, Si, POWER, MOSFET, TO-220aB
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| File Size |
185.35K /
16 Page |
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it Online |
Download Datasheet |
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