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vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363 Search Time::1.609ms
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				NEC[NEC]
Part No.	NE71300-N NE71300-M NE71300-L NE713 NE71383B
OCR Text	...re Storage Temperature VDS VGSO vgdo ID Ptot Tch Tstg 5.0 5.0 6.0 IDSS 270 400 175 65 to +175 V V V mA mW mW C C [NE71383B] [NE71300] RECOMMENDED OPERATING CONDITION (TA = 25 C) CHARACTERISTIC Drain to Source Voltage Drain Current Input...
Description	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
File Size	87.85K / 16 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC] http://
Part No.	NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76100
OCR Text	...re Storage Temperature VDS VGSO vgdo ID Ptot Tch Tstg 5.0 V -5.0 V -6.0 V 100 mA 300 mW 150 C -65 to +150 C 1. Source 2. Drain 3. Source 4. Gate ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Gate to Source Leak Current Saturated D...
Description	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
File Size	64.17K / 10 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK4027
OCR Text	...rature Storage Temperature VDSX vgdo ID IG PT Tj Tstg 20 -20 10 10 200 125 -55 to +125 V V mA mA mW C C 1: Source 2: Drain 3: Gate 1 3 EQUIVALENT CIRCUIT 2 Caution Please take care of ESD (Electro Static Discharge) when you handle t...
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size	126.02K / 5 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK4028
OCR Text	...rature Storage Temperature VDSX vgdo ID IG PT Tj Tstg 20 -20 10 10 100 125 -55 to +125 V V mA mA mW C C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle...
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size	126.20K / 5 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EMM5206LP
OCR Text	...ility, High Breakdown Voltage : vgdo=20V, Igdo=160uA DESCRIPTION The ES/EMM5206LP is a negative resistance MMIC designed for K-band doppler sensor application as an oscillator. This product is well suited for radiowave sensor and LMDS appli...
Description	K Band Oscillator MMIC
File Size	213.48K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0952P
OCR Text	...e maximum ratings Symbol VGSO vgdo ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Sto...
Description	L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] From old datasheet system
File Size	1,403.39K / 50 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE76118-T2 NE76118-T1 NE76118
OCR Text	...re Storage Temperature VDS VGSO vgdo ID Ptot Tch Tstg 5.0 -5.0 -6.0 IDSS 130 150 -65 to +150 V V V mA mW qC qC Document No. P11129EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan (c) 1996 NE76118 RECOMMEND...
Description	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
File Size	49.80K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSK595H KSK595HMTF
OCR Text	... unless otherwise noted Symbol vgdo IG ID PD TJ TSTG Parameter Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 100 150 -55 ~ 150 Units V mA mA mW C C Electrical C...
Description	Capacitor Microphone Applications Silicon N-Channel Junction FET
File Size	62.25K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSK596 KSK596ABU KSK596BBU KSK596BU KSK596CBU
OCR Text	... unless otherwise noted Symbol vgdo IG ID PD TJ TSTG Parameter Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 100 150 -55 ~ 150 Units V mA mA mW C C Electrical C...
Description	Silicon N-Channel Junction FET CAPACITOR MICROPHONE APPLICATIONS
File Size	44.42K / 5 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SK2685
OCR Text	...ge temperature Symbol VDSS VGSO vgdo ID Pch Tch Tstg Ratings 6 -6 -7 20 100 125 -55 to +125 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when h...
Description	GAAS HEMT
File Size	48.75K / 10 Page	View it Online	Download Datasheet

For vgdo Found Datasheets File :: 363 Search Time::1.609ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |