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For vgss Found Datasheets File :: 9579 Search Time::0.953ms
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				Renesas Electronics Corporation
Part No.	HAF2015RJ HAF2015RJ-EL
OCR Text	... Notes: 1. 2. 3. 4. Symbol VDSS vgss vgss ID ID (pulse) Note 1 IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3 Tch Tstg Value 60 16 -2.5 2 4 2 0.54 25 2 1.5 150 -55 to +150 Unit V V V A A A A mJ W W C C PW 10 s, duty cycle 1% 1 Drive o...
Description	Silicon N Channel MOSFET Series Power Switching
File Size	134.99K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HAF2014 HAF2014-90
OCR Text	.... Value at Ta = 25C Symbol VDSS vgss vgss ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16 -2.5 40 80 40 50 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics Item Input voltage Input current (Gate non shut...
Description	Silicon N Channel MOSFET Series Power Switching
File Size	80.98K / 8 Page	View it Online	Download Datasheet

				http:// Fairchild Semiconductor
Part No.	FDW9926A08 FDW9926A
OCR Text	...circuit applications * Extended vgss range (10V) for battery applications * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Battery protection * Load switch * Power management ...
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
File Size	218.78K / 5 Page	View it Online	Download Datasheet

				California Eastern Laboratories
Part No.	55410 NE55410GR-T3-AZ
OCR Text	...(Q2) IDSS (Q2) Vth (Q2) gm (Q2) vgss = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS = 100 mA - - 2.0 - 65 - - 2.6 0.45 75 1 1 3.2 - - IGSS (Q1) IDSS (Q1) Vth (Q1) gm (Q1) vgss = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS...
Description	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
File Size	316.24K / 13 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SK1254S
OCR Text	...10 s, duty cycle 1% Symbol VDSS vgss ID ID PD Tch Tstg Rating 120 20 3 12 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off cu...
Description	Silicon N-Channel MOSFET
File Size	40.66K / 1 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SJ461
OCR Text	...re * PW 10 s; d 1%. Symbol VDSS vgss ID ID PD Tch Tstg Rating -50 7.0 0.1 0.2 200 150 -55 to +150 Unit V V A A mW Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-...
Description	MOS Field Effect Transistor
File Size	39.88K / 1 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	VEC2814
OCR Text	...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 10 3 12 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : CC Any and all SANYO Se...
Description	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
File Size	45.96K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	VEC2813
OCR Text	...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 10 3 12 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : CB Any and all SANYO Se...
Description	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
File Size	46.46K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	VEC2812
OCR Text	...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 10 1.5 6 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : BZ Any and all SANYO S...
Description	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
File Size	45.97K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HAF1010RJ
OCR Text	...VDSS -60 Gate to source voltage vgss -16 Gate to source voltage vgss 2.5 Drain current ID -5 Drain peak current ID (pulse) Note1 -10 Body-drain diode reverse drain current IDR -5 Note2 Cannel dissipation Pch 2.5 Cannel temperature Tch 150 S...
Description	Silicon P Channel MOS FET Series Power Switching
File Size	142.39K / 7 Page	View it Online	Download Datasheet

For vgss Found Datasheets File :: 9579 Search Time::0.953ms
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