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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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| Part No. |
C67078-S1331-A3 BUZ12A
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| OCR Text |
...nverse diode forward voltage
vsd trr Qrr
VGS = 0 V, IF = 84 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/s
Semiconductor Group
4
07/96
BUZ 12 A... |
| Description |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管(N通道增强模式雪崩级)
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| File Size |
120.68K /
9 Page |
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it Online |
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-S1315-A2 BUZ76A
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| OCR Text |
... C Values typ. max. Unit
ISM vsd trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 6 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) From old datasheet system
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| File Size |
172.71K /
9 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-S1301-A3 BUZ11A
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| OCR Text |
...nverse diode forward voltage
vsd trr Qrr
VGS = 0 V, IF = 60 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/s
Semiconductor Group
4
07/96
BUZ 11 A... |
| Description |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
117.32K /
9 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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| Part No. |
C67078-A3210-A2 BUZ385
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| OCR Text |
....2 Values typ. max. Unit
ISM vsd trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 21 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
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| Description |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode FREDFET) 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
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| File Size |
154.48K /
9 Page |
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it Online |
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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| Part No. |
C67078-A3205-A2 BUZ380
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| OCR Text |
....9 Values typ. max. Unit
ISM vsd trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 11 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
... |
| Description |
From old datasheet system SIPMOS ? Power Transistor 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor SIPMOS Power Transistor (N channel Enhancement mode FREDFET) SIPMOS功率晶体管(N通道增强模式FREDFET
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| File Size |
151.31K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF8N80
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.9 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recov... |
| Description |
800V N-Channel MOSFET
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| File Size |
687.73K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BUZ345 BUZ345C67078-S3121-A2
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| OCR Text |
...nverse diode forward voltage
vsd
VGS = 0 V, IF = 82 A
Reverse recovery time
trr
VR = 30 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/s
Data Sheet
4
05.99
BUZ 345
... |
| Description |
Single-chip ZigBee® 802.15.4 solution SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
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| File Size |
92.71K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BUZ344
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| OCR Text |
...nverse diode forward voltage
vsd
VGS = 0 V, IF = 100 A
Reverse recovery time
trr
VR = 30 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
Qrr
VR = 30 V, IF=lS, diF/dt = 100 A/s
Data Sheet
4
05.99
BUZ 344
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| Description |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL SIPMOS Power Transistor
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| File Size |
94.02K /
8 Page |
View
it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BUZ341
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| OCR Text |
...nverse diode forward voltage
vsd
VGS = 0 V, IF = 66 A
Reverse recovery time
trr
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/s
Data Sheet
4
05.99
BUZ 341
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| Description |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=70mOhm, 33A, NL SIPMOS Power Transistor
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| File Size |
92.13K /
8 Page |
View
it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BUZ32 BUZ32SMD
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| OCR Text |
...nverse diode forward voltage
vsd
VGS = 0 V, IF = 19 A
Reverse recovery time
trr
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/s
Data Sheet
4
05.99
BUZ 32
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| Description |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL SIPMOS Power Transistor
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| File Size |
89.27K /
8 Page |
View
it Online |
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