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    2SK1157 2SK1158

Hitachi Semiconductor
Part No. 2SK1157 2SK1158
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1157, 2SK1158 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 2.08C/w, TC = 25C PDM Pw 1 D = Pw T 0.01 10 0.01 ulse tP ho 1S...
Description Silicon N-channel MOS FET

File Size 48.24K  /  9 Page

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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1159, 2SK1160 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 2.08C/w, TC = 25C PDM uls e 0.03 D= T 100 1m 10 m Pulse width...
Description Silicon N-channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1161 2SK1162

Hitachi Semiconductor
Part No. 2SK1161 2SK1162
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1161, 2SK1162 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 1.25C/w, TC = 25C PDM D = Pw T 0.03 1S 0.01 10 h ul ot P...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 33.64K  /  6 Page

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    2SK1163 2SK1164 2SK1161 2SK1162

HITACHI[Hitachi Semiconductor]
Part No. 2SK1163 2SK1164 2SK1161 2SK1162
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1163, 2SK1164 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 1.25C/w, TC = 25C PDM D = Pw T 0.03 1S 0.01 10 ho lse t...
Description Silicon N-channel MOS FET

File Size 33.64K  /  6 Page

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    2SK1165 2SK1166

HITACHI[Hitachi Semiconductor]
Part No. 2SK1165 2SK1166
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1165, 2SK1166 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 1.25C/w, TC = 25C PDM Pw 1 D = Pw T 0.03 1S 0.01 10 lse t ...
Description Silicon N-channel MOS FET

File Size 49.04K  /  9 Page

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    2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160

HITACHI[Hitachi Semiconductor]
Part No. 2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1167, 2SK1168 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S(t) * ch-c ch-c = 1.25C/w,TC = 25C PDM D = Pw T Pw T 100 m 1 10 Switching Time Test C...
Description Silicon N-channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1169 2SK1170

HITACHI[Hitachi Semiconductor]
Part No. 2SK1169 2SK1170
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1169, 2SK1170 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 1.04C/w,TC = 25C PDM D = Pw T Pw T 100 1m 10 m Pulse width Pw (s) 10...
Description Silicon N-channel MOS FET

File Size 48.20K  /  9 Page

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    2SK1276A

FUJI[Fuji Electric]
Part No. 2SK1276A
OCR Text ...0 150 -55 ~ +150 Unit V V A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 1,25 ...
Description N-channel MOS-FET

File Size 200.27K  /  2 Page

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    2SK1277

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1277
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 0,83 ...
Description N-channel MOS-FET(250V, 0.12Ohm, 30A, 150w) 30 A, 250 V, 0.12 ohm, N-chANNEL, Si, POwER, MOSFET

File Size 205.29K  /  2 Page

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    2SK1278

FUJI[Fuji Electric]
Part No. 2SK1278
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 1,25 ...
Description N-channel MOS-FET

File Size 188.02K  /  2 Page

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