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Mitsubishi Electric Corporation
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| Part No. |
CM600HU-12H
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| OCR Text |
... delay time t d(off) r g = 1.0 w , resistive C C 350 ns times fall time t f load switching operation C C 300 ns diode reverse recovery time...res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies... |
| Description |
IGBT Modules: 600V
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| File Size |
46.74K /
4 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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| Part No. |
CM600HU-24H
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| OCR Text |
... delay time t d(off) r g = 2.1 w , resistive C C 450 ns times fall time t f load switching operation C C 350 ns diode reverse recovery time...res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies... |
| Description |
IGBT Modules:1200V
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| File Size |
46.22K /
4 Page |
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it Online |
Download Datasheet |
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Powerex Power Semicondu...
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| Part No. |
CM100DU-24NFH
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| OCR Text |
... u 0.33 8.5 v 0.63 16.0 w 0.1 2.5 x 0.98 25.0 y 0.47 12.0 z 0.11 2.8 r c2e1 e2 c1 e1 g1 e2 g2 g2 e2 c2e1 e2 c1 e1 g1 t...res 0.3 nf inductive turn-on delay time t d(on) 100 ns load rise time t r v ... |
| Description |
Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts
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| File Size |
570.00K /
4 Page |
View
it Online |
Download Datasheet |
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Cree, Inc
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| Part No. |
CG2H40010 CG2H40010F CG2H40010P
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| OCR Text |
w, dc - 6 ghz, rf power gan hemt crees cg2h40010 is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the cg2h4...res,1/16w,0603,1%,0 ohms 1 r3 res,1/16w,0603,1%,47 ohms 1 r4 res,1/16w,0603,1%,100 ohms 1 c6 cap, 47... |
| Description |
10 w, DC - 6 GHz, RF Power GaN HEMT
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| File Size |
2,016.86K /
14 Page |
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it Online |
Download Datasheet |
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Price and Availability
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